Ordering number : ENA1141D EMH2407 N-Channel Power MOSFET EMH2407 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 20 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =20V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 0.5 1.3 V GS DS D Forward Transfer Admittance yfs V =10V, I =3A 3 5 S DS D R (on)1 I =3A, V =4.5V 13 19 25 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =3A, V =4V 14 20 26 m DS D GS R (on)3 I =1.5A, V =2.5V 16 28 39 m DS D GS Input Capacitance Ciss 580 pF Output Capacitance Coss V =10V, f=1MHz 95 pF DS Reverse Transfer Capacitance Crss 75 pF Turn-ON Delay Time t (on) 310 ns d Rise Time t 1020 ns r See speci ed Test Circuit. Turn-OFF Delay Time t(off) 3000ns d Fall Time t 2250 ns f Total Gate Charge Qg 6.3 nC Gate-to-Source Charge Qgs V =10V, V =4.5V, I =6A 0.83 nC DS GS D Gate-to-Drain Miller Charge Qgd 1.9 nC Diode Forward Voltage V I =6A, V =0V 0.78 1.2 V SD S GS Switching Time Test Circuit V V =10V IN DD 4.5V 0V I =3A D V IN R =3.33 L D V OUT PW=10s D.C.1% Rg G EMH2407 P.G 50 S Rg=2k Ordering Information Device Package Shipping memo EMH2407-TL-H EMH8 3,000pcs./reel Pb Free and Halogen Free No. A1141-2/7