MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 m FCPF165N65S3R0L Description SUPERFET III MOSFET is ON Semiconductors brand new high www.onsemi.com voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This advanced technology is tailored to minimize V R MAX I MAX DS DS(ON) D conduction loss, provides superior switching performance, and 650 V 165 m 10 V 19 A withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. D Features 700 V T = 150C J Typ. R = 140 m DS(on) Ultra Low Gate Charge (Typ. Q = 35 nC) g G Low Effective Output Capacitance (Typ. C = 345 pF) oss(eff.) 100% Avalanche Tested S These Devices are PbFree and are RoHS Compliant N-CHANNEL MOSFET Applications Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter G D S TO220F3LD CASE 340BF MARKING DIAGRAM Y&Z&3&K FCPF165 N65S3R0 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCPF165N65S3R0 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: December, 2020 Rev. 7 FCPF165N65S3R0L/DFCPF165N65S3R0L ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 V I Drain Current: Continuous (T = 25C) 19 A D C Continuous (T = 100C) 12.3 C I Drain Current: Pulsed (Note 1) 47.5 A DM E Single Pulsed Avalanche Energy (Note 2) 87 mJ AS I Avalanche Current (Note 2) 2.7 A AS E Repetitive Avalanche Energy (Note 1) 0.35 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 35 W D C Derate Above 25C 0.28 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 2.7 A, R = 25 , starting T = 25 C. AS G J 3. I 9.5 A, di/dt 200 A/ s, V 400 V, starting T = 25 C. SD DD J PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCPF165N65S3R0L FCPF165N65S3R0 TO220F Tube N/A N/A 50 Units THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 3.56 C/W JC R Thermal Resistance, Junction to Ambient, Max. 62.5 JA www.onsemi.com 2