MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 17 A, 190 m FCPF190N65S3R0L Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductors brand new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate V R MAX I MAX DSS DS(on) D charge performance. This advanced technology is tailored to minimize 650 V 190 m 10 V 17 A conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET D Easy drive series helps manage EMI issues and allows for easier design implementation. Features G 700 V T = 150C J Typ. R = 159 m DS(on) Ultra Low Gate Charge (Typ. Q = 33 nC) g S Low Effective Output Capacitance (Typ. C = 300 pF) oss(eff.) 100% Avalanche Tested This Device is PbFree and is RoHS Compliant Applications G D S Computing / Display Power Supplies Telecom / Server Power Supplies TO220 CASE 340BF Industrial Power Supplies Lighting / Charger / Adapter MARKING DIAGRAM Y&Z&3&K FCPF190 N65S3R0 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCPF190N65S3R0 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: September, 2019 Rev. 7 FCPF190N65S3R0L/DFCPF190N65S3R0L ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f 1 Hz) 30 V I Drain Current A Continuous (T = 25C) 17* D C Continuous (T = 100C) 11* C I Drain Current Pulsed (Note 1) 42.5* A DM E Single Pulsed Avalanche Energy (Note 2) 76 mJ AS I Avalanche Current (Note 2) 2.5 A AS E Repetitive Avalanche Energy (Note 1) 1.44 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation T = 25C 33 W D C Derate Above 25C 1.15 W/C T , T Operating and Storage Temperature Range 55 to +150 J STG C Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 L C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Drain current limited by maximum junction temperature. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 2.5 A, R = 25 , starting T = 25C. AS G J 3. I 8.5 A, di/dt 200 A/ms, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit RJC Thermal Resistance, Junction to Case, Max. 3.76 C/W RJA Thermal Resistance, Junction to Ambient, Max. 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCPF190N65S3R0L FCPF190N65S3R0 TO220F Tube N/A N/A 50 Units www.onsemi.com 2