SSM3J130TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J130TU Power Management Switch Applications 1.5 V drive Unit: mm Low ON-resistance:R = 63.2 m (max) ( V = -1.5 V) DS(ON) GS R = 41.1 m (max) ( V = -1.8 V) DS(ON) GS 2.10.1 R = 31.0 m (max) ( V = -2.5 V) DS(ON) GS 1.70.1 R = 25.8 m (max) ( V = -4.5 V) DS(ON) GS 1 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 3 2 Drain-Source voltage V -20 V DSS Gate-Source voltage V 8 V GSS DC I -4.4 D Drain current A Pulse I -8.8 DP P (Note 1) 800 D Power dissipation mW P (Note 2) 500 D 1: Gate Channel temperature T 150 C ch 2: Source Storage temperature range T -55 to 150 C stg 3: Drain UFM Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. JEITA operating temperature/current/voltage, etc.) are within the absolute maximum ratings. TOSHIBA 2-2U1A Please design the appropriate reliability upon reviewing the Weight: 6.6 mg (typ.) Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. 2 (25.4 mm 25.4 mm 0.8 mm, Cu Pad: 645 mm ) Note 2: Mounted on an FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (top view) 3 3 JJC 1 2 1 2 Start of commercial production 2009-01 1 2014-03-01 2.00.1 0.650.05 0.70.05 0.1660.05 +0.1 0.3 -0.05SSM3J130TU Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -20 (BR) DSS D GS Drain-Source breakdown voltage V V I = -1 mA, V = 5 V (Note 4) -15 (BR) DSX D GS Drain cut-off current I V = -20 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -2.0 A (Note 3) 8.8 17.5 S fs DS D I = -4.0 A, V = -4.5 V (Note 3) 20.9 25.8 D GS I = -4.0 A, V = -2.5 V (Note 3) 24.2 31.0 D GS Drainsource ON-resistance R m DS (ON) I = -2.5 A, V = -1.8 V (Note 3) 28.8 41.1 D GS I = -1.5 A, V = -1.5 V (Note 3) 32.4 63.2 D GS Input capacitance C 1800 iss V = -10 V, V = 0 V DS GS Output capacitance pF C 205 oss f = 1 MHz Reverse transfer capacitance C 190 rss Turn-on time t V = -10 V, I = -1.5 A 25 on DD D Switching time ns V = 0 to -2.5 V, R = 4.7 Turn-off time t 133 GS G off Total Gate Charge Q 24.8 g V = -10 V, I = - 4.4 A, DS DS Gate-Source Charge nC Q 18.0 gs V = - 4.5 V GS Gate-Drain Charge Q 6.8 gd Drain-Source forward voltage V I = 4.4 A, V = 0 V (Note 3) 0.83 1.2 V DSF D GS Note3: Pulse test Note4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test Circuit (b) V IN 0 V 90% OUT 0 IN 10% -2.5 V -2.5V R L V DS (ON) 90% (c) V OUT 10 s V DD V = -10 V 10% DD V DD R = 4.7 G t t r f Duty 1% V : t , t < 5 ns IN r f t t on off Common Source Ta = 25C Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I ) to below 1 mA for the th D SSM3J130TU. Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V th. GS(off) th GS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 R G