FDMS039N08B ON Semiconductor

FDMS039N08B electronic component of ON Semiconductor
FDMS039N08B ON Semiconductor
FDMS039N08B MOSFETs
FDMS039N08B  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDMS039N08B MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDMS039N08B MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.FDMS039N08B
Manufacturer:ON Semiconductor
Category:MOSFETs
Description:Power-56 MOSFETs ROHS
DC motor speed controller IC with overcurrent protection.
Datasheet:FDMS039N08B Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 2.7578 ea
Line Total: USD 2.76 
Availability : 4680
  
Ship by Wed. 24 Jun to Tue. 30 Jun
QtyUnit Price
1$ 2.7578
10$ 1.7893
30$ 1.4719
100$ 1.3157
500$ 1.2443
1000$ 1.2127
  

Availability2177
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.225
10$ 2.53
100$ 1.683
500$ 1.364
1000$ 1.331
3000$ 1.232


Availability4680
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.7578
10$ 1.7893
30$ 1.4719
100$ 1.3157
500$ 1.2443
1000$ 1.2127


Availability339
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 224
Multiples : 1
QtyUnit Price
224$ 2.0938
500$ 1.8906
1000$ 1.7344
10000$ 1.5494
100000$ 1.2981


Availability1497
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 84
Multiples : 1
QtyUnit Price
84$ 3.1199
124$ 2.1089
126$ 2.0698
157$ 1.6638
250$ 1.6471
500$ 1.4584
1000$ 1.343

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDMS039N08B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDMS039N08B and other electronic components in the MOSFETs category and beyond.

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FDMS039N08B is a N-Channel Enhancement-Mode Power MOSFET manufactured by ON Semiconductor. It has a rated drain-source breakdown voltage of 90 V, a maximum pulsed drain current of 39 A and a maximum drain-source on-state resistance of 0.08 O. The power dissipation rate is tuned for high-frequency, high-efficiency switching applications up to 40 V. It is RoHS compliant and is suitable for use in battery-powered and automotive applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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