X-On Electronics has gained recognition as a prominent supplier of FDMS039N08B MOSFET across the USA, India, Europe, Australia, and various other global locations. FDMS039N08B MOSFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

FDMS039N08B ON Semiconductor

FDMS039N08B electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.FDMS039N08B
Manufacturer: ON Semiconductor
Category: MOSFET
Description: Power-56 MOSFETs ROHS
DC motor speed controller IC with overcurrent protection.
Datasheet: FDMS039N08B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0081 ea
Line Total: USD 2.01

Availability - 1012
Ships to you between
Fri. 21 Jun to Thu. 27 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1012 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 2.0081
10 : USD 1.8256
25 : USD 1.8162
100 : USD 1.5982
250 : USD 1.5855
500 : USD 1.4322
1000 : USD 1.3129

1012 - WHS 2


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 6
Multiples : 1
6 : USD 2.0081
10 : USD 1.8256
25 : USD 1.8162
100 : USD 1.5982
250 : USD 1.5855
500 : USD 1.4322
1000 : USD 1.3129

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
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We are delighted to provide the FDMS039N08B from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDMS039N08B and other electronic components in the MOSFET category and beyond.

FDMS039N08B is a N-Channel Enhancement-Mode Power MOSFET manufactured by ON Semiconductor. It has a rated drain-source breakdown voltage of 90 V, a maximum pulsed drain current of 39 A and a maximum drain-source on-state resistance of 0.08 O. The power dissipation rate is tuned for high-frequency, high-efficiency switching applications up to 40 V. It is RoHS compliant and is suitable for use in battery-powered and automotive applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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