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FDMS7682 N-Channel PowerTrench MOSFET January 2015 FDMS7682 N-Channel PowerTrench MOSFET 30 V, 6.3 m Features General Description Max r = 6.3 m at V = 10 V, I = 14 A This N-Channel MOSFET has been designed specifically to DS(on) GS D improve the overall efficiency and to minimize switch node Max r = 10.4 m at V = 4.5 V, I = 11 A DS(on) GS D ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low r conventional switching PWM controllers.It has been optimized DS(on) and high efficiency for low gate charge, low r , fast switching speed and body DS(on) diode reverse recovery performance. Next generation enhanced body diode technology, engineered for soft recovery Applications MSL1 robust package design IMVP Vcore Switching for Notebook 100% UIL tested VRM Vcore Switching for Desktop and server RoHS Compliant OringFET / Load Switching DC-DC Conversion Bottom Top Pin 1 S D 5 G 4 S S G D 6 3 S S D 7 2 D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Drain to Source Transient Voltage ( t < 100 ns) 33 V DSt Transient V Gate to Source Voltage (Note 4) 20 V GS Drain Current -Continuous (Package limited) T = 25 C 22 C -Continuous (Silicon limited) T = 25 C 59 C I A D -Continuous T = 25 C (Note 1a) 16 A -Pulsed 80 E Single Pulse Avalanche Energy (Note 3) 29 mJ AS Power Dissipation T = 25 C 33 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.7 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7682 FDMS7682 Power 56 13 12 mm 3000 units 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMS7682 Rev.C3