DATA SHEET www.onsemi.com MOSFET - N-Channel, ELECTRICAL CONNECTION POWERTRENCH , DUAL S D COOL 56 Shielded Gate D S D S 100 V, 60 A, 7.5 m G D N-Channel MOSFET FDMS86101DC D General Description D D D This NChannel MOSFET is produced using onsemis advanced Pin 1 POWERTRENCH process that incorporates Shielded Gate G technology. Advancements in both silicon and DUAL COOL S S Pin 1 package technologies have been combined to offer the lowest r S DS(on) while maintaining excellent switching performance by extremely low Top Bottom JunctiontoAmbient thermal resistance. DFN8 5.1x6.15 (Dual Cool 56) Features CASE 506EG Shielded Gate MOSFET Technology DUAL COOL Top Side Cooling PQFN package MARKING DIAGRAM Max R = 7.5 m at V = 10 V, I = 14.5 A DS(on) GS D Max R = 12 m at V = 6 V, I = 11.5 A DS(on) GS D AYWWZZ 86101 High performance technology for extremely low R DS(on) 100% UIL Tested RoHS Compliant Typical Applications Primary DCDC MOSFET 86101 = Device Code Secondary Synchronous Rectifier A = Assy Location Y = Year Code Load Switch WW = Work Week Code ZZ = Assy Lot Code ORDERING INFORMATION See detailed ordering, marking and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: August, 2021 Rev. 3 FDMS86101DC/DFDMS86101DC PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Shipping 86101 FDMS86101DC UDFN8 13 12 mm 3000 Units/ Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Ratings Units 100 V V Drain to Source Voltage DS 20 V V Gate to Source Voltage GS 60 A I Drain Current Continuous T = 25C D C 14.5 Continuous T = 25C (Note 1a) A 200 Pulsed 216 mJ E Single Pulse Avalanche Energy (Note 3) AS 125 W P Power Dissipation T = 25C D C 3.2 Power Dissipation T = 25C (Note 1a) A 55 to +150 C T , T Operating and Storage Junction Temperature Range J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min. Typ. Max. Units OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 100 V DSS D GS Breakdown Voltage Temperature I = 250 A, referenced to 25C 70 mV/C BV D DSS Coefficient T J I Zero Gate Voltage Drain Current V = 80 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 2 2.7 4 V GS(th) GS DS D Gate to Source Threshold Voltage Tempera- I = 250 A, referenced to 25C 10 mV/C V D GS(th) ture Coefficient T J r Static Drain to Source On Resistance V = 10 V, I = 14.5 A 6 7.5 m DS(on) GS D V = 6 V, I = 11.5 A 8.3 12 GS D V = 10 V, I = 14.5 A, T = 125C 10 13 GS D J 44 g Forward Transconductance V = 10 V, I = 14.5 A S FS DD D DYNAMIC CHARACTERISTICS V = 50 V, V = 0 V, f = 1 MHz 2354 3135 pF C Input Capacitance DS GS ISS 467 625 pF C Output Capacitance OSS 23 35 pF C Reverse Transfer Capacitance RSS 0.1 1.4 3 R Gate Resistance G www.onsemi.com 2