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TM FDMS8570S N-Channel PowerTrench SyncFET November 2014 FDMS8570S TM N-Channel PowerTrench SyncFET 25 V, 60 A, 2.8 m Features General Description TM Max r = 2.8 m at V = 10 V, I = 24 A This N-Channel SyncFET is produced using Fairchild DS(on) GS D Semiconductors advanced PowerTrench process. Max r = 3.1 m at V = 4.5 V, I = 22 A DS(on) GS D Advancements in both silicon and package technologies have High performance technology for extremely low r been combined to offer the lowest r while maintaining DS(on) DS(on) TM excellent switching performance by extremely low Junction-to- SyncFET Schottky Body Diode Ambient thermal resistance. This device has the added benefit RoHS Compliant of an efficient monolithic Schottky body diode. Applications Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side Bottom Top Pin 1 D 5 4 G S S S D G 6 3 S D 7 2 S D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage 12 V GS Drain Current -Continuous (Package limited) T = 25 C 60 C I -Continuous T = 25 C (Note 1a) 24 A D A -Pulsed 100 E Single Pulse Avalanche Energy (Note 3) 45 mJ AS Power Dissipation T = 25 C 48 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case T = 25 C 2.6 JC C C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 10OD FDMS8570S Power 56 13 12 mm 3000 units 2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS8570S Rev.D3