MOSFET N-Channel, DUAL COOL DFN8, POWERTRENCH 40 V, 192 A, 1.1 m FDMS8320LDC www.onsemi.com Features Max R = 1.1 m at V = 10 V, I = 44 A DS(on) GS D D D Max R = 1.5 m at V = 4.5 V, I = 37 A D DS(on) GS D Pin 1 D Advanced Package and Silicon Combination for Low R and DS(on) S High Efficiency G S S Pin 1 Next Generation Enhanced Body Diode Technology, Engineered for S Top Bottom Soft Recovery MSL1 Robust Package Design DFN8 DUAL COOL 100% UIL Tested CASE 506EG This Device is PbFree, Halogen Free and RoHS Compliant Applications OringFET/Load Switching SD18 Synchronous Rectification DCDC Conversion SD27 MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Ratings UnitSD36 V DraintoSource Voltage 40 V DSS V GatetoSource Voltage 20 V GD45 GS I Drain Current A D Continuous T = 25C 192 C Continuous T = 25C (Note 1a) 44 A Pulsed (Note 4) 300 MARKING DIAGRAM E Single Pulse Avalanche Energy 661 mJ AS (Note 3) AWLYW P Power Dissipation, T = 25C 125 W D C 8320L Power Dissipation, T = 25C 3.2 A (Note 1a) T , T Operating and Storage Junction 55 to +150 C J STG Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 8320L = Specific Device Code assumed, damage may occur and reliability may be affected. A = Assembly Location WL = Wafer Lot Y = Year W = Work Week ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: May, 2021 Rev. 3 FDMS8320LDC/DFDMS8320LDC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BV DraintoSource Breakdown 40 V I = 250 A, V = 0 V DSS D GS Voltage BV / T Breakdown Voltage Temperature I = 250 A, referenced to 25C 22 mV/C DSS J D Coefficient I Zero Gate Voltage Drain Corrent V = 32 V, V = 0 V 1 A DSS DS GS I GatetoSource Leakage Current V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V GatetoSource Threshold Voltage V = V , I = 250 A 1.0 1.6 3.0 V GS(th) GS DS D V / T GatetoSource Threshold Voltage I = 250 A, referenced to 25C 6 mV/C GS(th) J D Temperature Coefficient R Static DraintoSource On V = 10 V, I = 44 A 0.8 1.1 m DS(on) GS D Resistance V = 4.5 V, I = 37 A 1.1 1.5 GS D V = 10 V, I = 44 A, T = 125C 1.2 1.7 GS D J g Forward Transconductance V = 5 V, I = 44 A 244 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 20 V, V = 0 V, f = 1 MHz 8310 11635 pF iss DS GS C Output Capacitance 2255 3160 pF oss C Reverse Transfer Capacitance 132 185 pF rss R Gate Resistance f = 1 MHz 0.1 1.4 2.6 g SWITCHING CHARACTERISTICS t TurnOn Delay Time V = 20 V, I = 44 A, 19 34 ns DD D d(on) V = 10 V, R = 6 GS GEN t Rise Time 15 27 ns r t TurnOff Delay Time 69 110 ns d(off) t Fall Time 14 25 ns f Q Total Gate Charge V = 0 to 10 V, V = 20 V, I = 44 A 121 170 nC g(ToT) GS DD D Q Total Gate Charge V = 0 to 4.5 V, V = 20 V, I = 44 A 57 80 nC g(ToT) GS DD D Q GatetoSource Charge V = 20 V, I = 44 A 21 nC gs DD D Q GatetoDrain Miller Charge V = 20 V, I = 44 A 16 nC gd DD D DRAINSOURCE DIODE CHARACTERISTIC V SourcetoDrain Diode Forward V = 0 V, I = 2.6 A (Note 2) 0.7 1.1 V SD GS S Voltage V = 0 V, I = 44 A (Note 2) 0.8 1.2 V GS S t Reverse Recovery Time I = 44 A, di/dt = 100 A/ s 65 104 ns rr F Q Reverse Recovery Charge 57 91 nC rr t Reverse Recovery Time I = 44 A, di/dt = 300 A/ s 49 79 ns rr F Q Reverse Recovery Charge 89 143 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2