DATA SHEET www.onsemi.com MOSFET N-Channel, V R MAX I MAX (BR)DSS DS(ON) D POWERTRENCH 80 V 13.4 m 10 V 50 A 80 V, 50 A, 13.4 m ELECTRICAL CONNECTION FDMS86380-F085 Features Typ R = 11.3 m at V = 10 V I = 50 A DS(on) GS D Typ Q = 20 nC at V = 10 V I = 50 A g(tot) GS D UIS Capability AECQ101 Qualified and PPAP Capable NChannel MOSFET This Device is PbFree, Halogen Free/BFR Free and is RoHS Compliant Bottom Top Pin 1 S S S Applications S Automotive Engine Control D D D PowerTrain Management D Solenoid and Motor Drivers PQFN8 Electronic Steering CASE 483BJ Integrated Starter/Alternator Distributed Power Architectures and VRM MARKING DIAGRAM Primary Switch for 12 V Systems MAXIMUM RATINGS (T = 25C unless otherwise noted) J ON AYWWWL Parameter Symbol Value Unit FDMS DraintoSource Voltage V 80 V DSS 86380 GatetoSource Voltage V 20 V GS Continuous Drain Current T = 25C I 50 A D C (V = 10 V) (Note 1) GS A = Assembly Location Pulsed Drain Current T = 25C See C WL = Wafer Lot Figure 4 Y = Year Single Pulse Avalanche Energy (Note 2) E 16 mJ WW = Work Week AS FDMS86380 = Specific Device Code Power Dissipation P 75 W D Derate above 25C 0.5 W/C ORDERING INFORMATION Operating and Storage Temperature T , T 55 to C J STG +175 Device Package Shipping Thermal Resistance (JunctiontoCase) R 2 C/W JC PQFN8 FDMS86380F085 3000 / Maximum Thermal Resistance R 50 C/W JA (Power 56) Tape & Reel (JunctiontoAmbient) (Note 3) (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the For information on tape and reel specifications, device. If any of these limits are exceeded, device functionality should not be including part orientation and tape sizes, please assumed, damage may occur and reliability may be affected. refer to our Tape and Reel Packaging Specification 1. Current is limited by bondwire configuration. Brochure, BRD8011/D. 2. Starting Tj = 25C, L = 20 H, I = 40 A, V = 80 V during inductor charging AS DD and V = 0 V during time in avalanche. DD 3. R is the sum of the junction to case and case to ambient thermal JA resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by design while R JC JA is determined by the users board design. The maximum rating presented 2 here is based on mounting on a 1 in pad of 2 oz copper. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2021 Rev. 3 FDMS86380F085/DFDMS86380F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Symbol Parameter Conditions Min Typ Max Unit OFF CHARACTERISTICS B DraintoSource Breakdown Voltage I = 250 A, V = 0 V 80 V VDSS D GS I DraintoSource Leakage Current V = 80 V, T = 25C 1 A DSS DS J V = 0 V GS T = 175C (Note 4) 1 mA J I GatetoSource Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V GatetoSource Threshold Voltage V = V , I = 250 A 2.0 3.0 4.0 V GS(th) GS DS D R DraintoSource OnResistance I = 50 A T = 25C 11.3 13.4 m DS(on) D J V = 10 V GS T = 175C (Note 4) 25.3 30.0 J DYNAMIC CHARACTERISTICS C Input Capacitance V = 40 V, V = 0 V, f = 1 MHz 1440 pF iss DS GS C Output Capacitance 300 oss C Reverse Transfer Capacitance 14 rss R Gate Resistance f = 1 MHz 2.0 g Q Total Gate Charge V = 0 to 10 V V = 64 V, 20 30 nC g(tot) GS DD I = 50 A D Q Threshold Gate Charge V = 0 to 2 V 2.7 g(th) GS Q GatetoSource Gate Charge 8.8 gs Q GatetoDrain Miller Charge 4.4 gd SWITCHING CHARACTERISTICS V = 40 V, I = 50 A, ns t TurnOn Time 31 on DD D V = 10 V, R = 6 GS GEN t TurnOn Delay 13 d(on) t Rise Time 8 r t TurnOff Delay 15 d(off) t Fall Time 5 f t TurnOff Time 30 off DRAINSOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode Voltage I = 50 A, V = 0 V 1.25 V SD SD GS I = 25 A, V = 0 V 1.2 SD GS t Reverse Recovery Time I = 50 A, dI /dt = 100 A/ s, V = 64 V 37 55 ns rr F SD DD Q Reverse Recovery Charge 23 35 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production J www.onsemi.com 2