Product Information

FDN342P

FDN342P electronic component of ON Semiconductor

Datasheet
Transistor: P-MOSFET; unipolar; -20V; -2A; 0.5W; SuperSOT-3

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1141 ea
Line Total: USD 342.3

113490 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
113490 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

FDN342P
ON Semiconductor

3000 : USD 0.1141
9000 : USD 0.1141
12000 : USD 0.1141
30000 : USD 0.1141
45000 : USD 0.1141

14550 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

FDN342P
ON Semiconductor

3000 : USD 0.1969
6000 : USD 0.193

116400 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

FDN342P
ON Semiconductor

3000 : USD 0.2072
6000 : USD 0.2031

72750 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

FDN342P
ON Semiconductor

3000 : USD 0.1615
18000 : USD 0.1583

     
Manufacturer
Product Category
Technology
Kind Of Package
Polarisation
Mounting
Case
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
Category
Brand Category
LoadingGif

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. General Description This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of ON Semiconductors advanced PowerTrench process. It has been optimized for power management applications for a wide range of % gate drive voltages (2.5V 12V). & Applications Load Switch & ( ()* ()* Battery Protection Power Management D D S TM G G S SuperSOT -3 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage V GSS 12 I Drain Current - Continuous (Note 1a) -2 A D - Pulsed -10 P Power Dissipation for Single Operation (Note 1a) 0.5 W D (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range -55 to +150 J stg C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 250 R C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 75 C/W JC Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDN342P FDN342P 7 8mm 3000 units 1999 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 2 FDN342P/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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