Product Information

2N7002H-13

2N7002H-13 electronic component of Diodes Incorporated

Datasheet
MOSFET 60V N-Ch Enh FET 7.5Ohm 5Vgs 210mA

Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3413 ea
Line Total: USD 0.34

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

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2N7002H-13
Diodes Incorporated

1 : USD 0.2617
10 : USD 0.2159
100 : USD 0.1109
500 : USD 0.0702
1000 : USD 0.0484
2500 : USD 0.0436
10000 : USD 0.0352
20000 : USD 0.0314
50000 : USD 0.0291

     
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2N7002H N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits N-Channel MOSFET I max D V R max (BR)DSS DS(ON) T = +25C A Low On-Resistance Low Gate Threshold Voltage 7.5 V = 5V 60V GS 210mA Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at 2N7002H Marking Information H7H = Product Type Marking Code YM = Date Code Marking H7H Y or Y = Year (ex: B = 2014) M = Month (ex: 9 = September) Date Code Key Year 2014 2015 2016 2017 2018 2019 2020 2021 Code B C D E F G H I Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage Continuous 20 V V GSS Pulsed 40 T = +25C 170 A Steady Continuous Drain Current (Note 5) V = 10V T = +85C I 120 mA GS A D State 105 T = +100C A TA = +25C 210 Steady 150 mA Continuous Drain Current (Note 6) V = 10V T = +85C I GS A D State 135 T = +100C A Maximum Body Diode Forward Current (Note 6) Continuous 0.5 I A S Pulsed 2 Pulsed Drain Current (10s pulse, duty cycle = 1%) 500 mA IDM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units (Note 5) 370 Total Power Dissipation mW P D (Note 6) 510 (Note 5) 341 Thermal Resistance, Junction to Ambient C/W R JA (Note 6) 249 Operating and Storage Temperature Range T T -55 to +150 C J, STG 2 of 7 2N7002H October 2019 Diodes Incorporated www.diodes.com Document number: DS38025 Rev. 2 - 2 YM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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