DMC62D0SVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max Low On-Resistance D Device BV R Max DSS DS(ON) T = +25C Low Input Capacitance A Fast Switching Speed 1.7 V = 10V 571mA GS Q1 60V Low Input/Output Leakage 3 V = 4.5V 430mA GS Ultra-Small Surface Mount Package 6 V = -10V -304mA GS ESD Protected Gate Q2 -50V 8 V = -5V -263mA GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Description and Applications Case: SOT563 This MOSFET is designed to meet the stringent requirements of Case Material: Molded Plastic, Green Molding Compound. Automotive applications. It is qualified to AEC-Q101, supported by a UL Flammability Classification Rating 94V-0 PPAP and is ideal for use in: Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. Battery e3 Solderable per MIL-STD-202, Method 208 Weight: 0.003 grams (Approximate) D2 D1 SOT563 D G S 1 2 2 G2 G1 Gate Protection S G D Gate Protection 1 1 2 S2 S1 Diode Diode ESD PROTECTED Top View Q1 N-CHANNEL Bottom View Top View Q2 P-CHANNEL Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMC62D0SVQ-7 SOT563 3,000/Tape & Reel DMC62D0SVQ-13 SOT563 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC62D0SVQ Marking Information 62S = Product Type Marking Code YM = Date Code Marking Y = Year (ex: E = 2017) 62S YM M = Month (ex: 9 = September) Date Code Key Year 2016 2017 2018 2019 2020 2021 2022 Code D E F G H I J Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Q1 Value Q2 Value Unit Drain-Source Voltage V 60 -50 V DSS Gate-Source Voltage 20 20 V VGSS Continuous Drain Current (Note 7) Steady T = +25C 571 -304 A N-Channel: V = 10V I mA GS D State 457 -243 T = +70C A P-Channel: V = -10V GS Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 1,200 -800 mA DM Maximum Body Diode Continuous Current (Note 7) I 500 -300 mA S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P 0.51 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) 250 C/W R JA Total Power Dissipation (Note 7) P 0.84 W D Steady State Thermal Resistance, Junction to Ambient (Note 7) 150 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 10 DMC62D0SVQ November 2017 Diodes Incorporated www.diodes.com Document number: DS39834 Rev. 2 - 2