Product Information

FDS8884

FDS8884 electronic component of ON Semiconductor

Datasheet
Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.2865 ea
Line Total: USD 716.25

31525 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
31525 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 2500
Multiples : 2500

Stock Image

FDS8884
ON Semiconductor

2500 : USD 0.2865

631 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 3
Multiples : 1

Stock Image

FDS8884
ON Semiconductor

3 : USD 0.6036
25 : USD 0.507
47 : USD 0.3621
129 : USD 0.3353

4722 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 29
Multiples : 1

Stock Image

FDS8884
ON Semiconductor

29 : USD 0.45
100 : USD 0.4373
250 : USD 0.4246
500 : USD 0.4162

     
Manufacturer
Product Category
Technology
Kind Of Package
Polarisation
Mounting
Case
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
Category
Brand Category
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. N O I T A T FDS8884 N-Channel PowerTrench MOSFET N E M E L MP I E E FDS8884 N-Channel PowerTrench MOSFET 30V, 8.5A, 23m General Descriptions Features Max r = 23m at V = 10V, I = 8.5A DS(on) GS D This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max r = 30m at V = 4.5V, I = 7.5A DS(on) GS D either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low Low gate charge r and fast switching speed. DS(on) 100% R Tested G RoHS Compliant D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage 20 V GS Drain Current Continuous (Note 1a) 8.5 A I D Pulsed 40 A E Single Pulse Avalanche Energy (Note 2) 32 mJ AS Power dissipation 2.5 W P D o o Derate above 25C20mW/ C o T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics o R Thermal Resistance, Junction to Ambient (Note 1a) 50 C/W JA o R Thermal Resistance, Junction to Case (Note 1) 25 C/W JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS8884 FDS8884 SO-8 330mm 12mm 2500 units 2006 Semiconductor Components Industries, LLC. 1 Publication Order Number: October-2017, Rev. 1 FDS8884/D R F D A E L

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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