FDY6342L Integrated Load Switch General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5 V to 8 V input and 0.83 A output current capability are needed. This load switch integrates a www.onsemi.com small NChannel power MOSFET (Q1) that drives a large PChannel power MOSFET (Q2) in one tiny SC89 6 package. Features Max r = 0.5 at V = 4.5 V, I = 0.83 A DS(on) GS D Max r = 0.7 at V = 2.5 V, I = 0.70 A DS(on) GS D Max r = 1.2 at V = 1.8 V, I = 0.43 A DS(on) GS D Max r = 1.8 at V = 1.5 V, I = 0.36 A DS(on) GS D Control MOSFET (Q1) Includes Zener Protection for ESD Ruggedness (>4 kV Human Body Model) High Performance Trench Technology for Extremely Low r DS(on) Compact Industry Standard SC896 Surface Mount Package This Device is PbFree and is RoHS Compliant Applications Power Management Load Switch MOSFET MAXIMUM RATINGS T = 25C Unless Otherwise Noted A Symbol Parameter Rating Units 6 5 VIN Gate to Source Voltage (Q2) 8 V 4 VON/OFF Gate to Source Voltage (Q1) 0.5 to 8 V 1 ILoad Load Current Continuous (Note 2) 0.83 A 2 3 Pulsed (Note 2) 1.0 SOT563 P Power Dissipation (Note 1a) 0.625 W D CASE 419BH Power Dissipation (Note 1b) 0.446 TJ, TSTG Operating and Storage Junction 55 to +150 C MARKING DIAGRAM Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. H&2 THERMAL CHARACTERISTICS Symbol Parameter Rating Units C/W RJA Thermal Resistance, Junction to Ambient 200 (Note 1a) H = Device Code (FDY6342L) RJA Thermal Resistance, Junction to Ambient 280 &2 = Date Code (Year & Week) (Note 1b) ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2019 Rev. 3 FDY6342L/DFDY6342L PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity H FDY6342L SC896 7 8 mm 3000 units ELECTRICAL CHARACTERISTICS T = 25C, Unless Otherwise Noted J Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS BV V Breakdown Voltage I = 250 A, V = 0 V 8 V D ON/OFF IN IN I Zero Gate Voltage Drain Current V = 6.4 V, V = 0 V 1 A Load IN ON/OFF I Leakage Current, Forward V = 8 V, V = 0 V 10 A FL IN ON/OFF I Leakage Current, Reverse V = 8 V, V = 0 V 10 A RL IN ON/OFF ON CHARACTERISTICS V = V , I = 250 A V Gate Threshold Voltage 0.65 0.85 1.5 V ON/OFF(th) IN ON/OFF D r Static Drain to Source On Resistance (Q2) DS(on) V = 4.5 V, I = 0.83 A 0.28 0.5 IN D V = 2.5 V, I = 0.70 A 0.35 0.7 IN D V = 1.8 V, I = 0.43 A 0.45 1.2 IN D V = 1.5 V, I = 0.36 A 0.57 1.8 IN D Static Drain to Source On Resistance (Q1) V = 4.5 V, I = 0.4 A 2.9 4.0 IN D V = 2.7 V, I = 0.2 A 3.5 5.0 IN D DRAINSOURCE DIODE CHARACTERISTICS I Maximum Continuous Drain to Source Diode Forward Current 0.25 A S V Source to Drain Diode Forward Voltage V = 0 V, I = 0.25 A 0.8 1.2 V SD ON/OFF S (Note 2) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2 1. R is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR4 material. R is guaranteed JA JC by design while R is determined by the users board design. JA a) 200C/W when mounted b) 280C/W when mounted on a 1 in2 pad of 2 oz copper. on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. FDY6342L Load Switch Application Circuit IN OUT Q2 C1 R1 Q1 LOAD ON/OFF R2 External Component Recommendation: For additional inrush current control, R2 and C1 can be added. For more information, see application note AN1030. www.onsemi.com 2