Silicon Carbide Schottky Diode 1200 V, 20 A FFSH20120ADN-F155 Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, 1. Anode 2. Cathode/ 3. Anode Case faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Schottky Diode Features Max Junction Temperature 175C Avalanche Rated 100 mJ High Surge Current Capacity Positive Temperature Coefficient 1 Ease of Paralleling 2 3 No Reverse Recovery/No Forward Recovery TO2473LD This Device is PbFree, Halogen Free/BFR Free and RoHS CASE 340CH Compliant MARKING DIAGRAM Applications General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits Y&Z&3&K FFSH 20120ADN Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSH20120ADN = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2020 Rev. 4 FFSH20120ADNF155/DFFSH20120ADN F155 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) (per leg) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 1200 V RRM E Single Pulse Avalanche Energy (Note 1) 100 mJ AS I Continuous Rectified Forward Current T < 155C 10* / 20** A F C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 630 A F,Max C T = 150C, 10 s 560 A C I Non-Repetitive Forward Surge Current HalfSine Pulse, t = 8.3 ms 96 A F,SM p I Repetitive Forward Surge Current HalfSine Pulse, t = 8.3 ms 46 A F,RM p P Power Dissipation T = 25C 150 W TOT C T = 150C 25 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG TO247 Mounting Torque, M3 Screw 60 Ncm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: * Per leg, ** Per Device. 1. E of 100 mJ is based on starting T = 25C, L = 0.5 mH, I = 20 A, V = 150 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 1* / 0.44** C/W JC NOTE: * Per leg, ** Per Device. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (per leg) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 10 A, T = 25C 1.45 1.75 V F F C I = 10 A, T = 125C 1.7 2.0 F C I = 10 A, T = 175C 2.0 2.4 F C I Reverse Current V = 1200 V, T = 25C 200 A R R C V = 1200 V, T = 125C 300 R C V = 1200 V, T = 175C 400 R C Q Total Capacitive Charge V = 800 V 62 nC C C Total Capacitance V = 1 V, f = 100 kHz 612 pF R V = 400 V, f = 100 kHz 58 R V = 800 V, f = 100 kHz 47 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Packing Method Quantity FFSH20120ADNF155 FFSH20120ADN TO2473LD Tube 30 Units www.onsemi.com 2