FFSH2065BDN-F085 Silicon Carbide Schottky Diode, 650 V, 20 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher www.onsemi.com reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. 1 2 3 Anode Cathode/ Anode Features Case Max Junction Temperature 175C Schottky Diode Avalanche Rated 49 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery AECQ101 Qualified These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant TO2473LD Applications CASE 340CH Automotive HEVEV Onboard Chargers Automotive HEVEV DCDC Converters MARKING DIAGRAM Y&Z&3&K FFSH 2065BDN Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSH2065BDN = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: February, 2019 Rev. 4 FFSH2065BDNF085/DFFSH2065BDN F085 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 49*/49** mJ AS I Continuous Rectified Forward Current T < 136C 10*/20** A F C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 650 A F, Max C T = 150C, 10 s 570 A C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 42 A F,SM p T = 25C C Ptot Power Dissipation T = 25C 65 W C T = 150C 11 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG TO247 Mounting Torque, M3 Screw 60 Ncm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. * Per Leg, ** Per Device 1. E of 49 mJ is based on starting T = 25C, L = 0.5 mH, I = 14 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 2.3*/1.2** C/W JC * Per Leg, ** Per Device ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted (per leg)) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 10 A, T = 25C 1.38 1.7 V F F C I = 10 A, T = 125C 1.6 2.0 F C I = 10 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 0.5 40 A R R C V = 650 V, T = 125C 1 80 R C V = 650 V, T = 175C 2 160 R C Q Total Capacitive Charge V = 400 V 25 nC C C Total Capacitance V = 1 V, f = 100 kHz 421 pF R V = 300 V, f = 100 kHz 40 R V = 600 V, f = 100 kHz 34 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping FFSH2065BDNF085 FFSH2065BDN TO2473LD 30 Units / Tube (PbFree / Halogen Free) www.onsemi.com 2