Silicon Carbide Schottky Diode 650 V, 20 A FFSH2065A Description Silicon Carbide (SiC) Schottky Diodes use a completely new www.onsemi.com technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, V I RRM F temperature independent switching characteristics, and excellent 650 V 20 A thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. Features Max Junction Temperature 175C 1. Cathode 2. Anode Avalanche Rated 95 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery This Device is PbFree and is RoHS Compliant 1 Applications 2 General Purpose TO2472LD CASE 340CL SMPS, Solar Inverter, UPS Power Switching Circuits MARKING DIAGRAM Y&Z&3&K FFSH 2065A Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSH2065A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: February, 2020 Rev. 1 FFSH2065A/DFFSH2065A ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter FFSH2065A Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 95 mJ AS I Continuous Rectified Forward Current A TC < 146C 20 F TC < 135C 25 I NonRepetitive Peak Forward Surge Current TC = 25C, 10 s 1100 A F, Max TC = 150C, 10 s 1000 A I NonRepetitive Forward Surge Current HalfSine Pulse, tp = 8.3 ms 105 A F, SM I Repetitive Forward Surge Current HalfSine Pulse, tp = 8.3 ms 58 A F, RM P Power Dissipation TC = 25C 183 W tot TC = 150C 31 W T , T Operating and Storage Temperature Range 55 to +175 C J STG TO247 Mounting Torque, M3 Screw 60 Ncm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 95 mJ is based on starting T = 25C, L = 0.5 mH, I = 19.5 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Rating Unit R Thermal Resistance, Junction to Case, Max. 0.82 C/W JC PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FFSH2065A FFSH2065A TO2472L Tube N/A N/A 30 Units ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit V Forward Voltage IF = 20 A, TC = 25C 1.50 1.75 V F IF = 20 A, TC = 125C 1.6 2.0 IF = 20 A, TC = 175C 1.72 2.4 I Reverse Current A VR = 650 V, TC = 25C 200 R VR = 650 V, TC = 125C 400 VR = 650 V, TC = 175C 600 Q Total Capacitive Charge V = 400 V 64 nC C C Total Capacitance VR = 1 V, f = 100 kHz 1085 pF VR = 200 V, f = 100 kHz 117 VR = 400 V, f = 100 kHz 88 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2