IGBT - SMPS 300 V FGH50N3 Description Using ON Semiconductors planar technology, this IGBT is ideal for many high voltage switching applications operating at high www.onsemi.com frequencies where low conduction losses are essential. This device has been optimized for medium frequency switch mode power supplies. Features C Low Saturation Voltage: V = 1.4 V Max CE(sat) Low E = 6.6 uJ/A OFF SCWT = 8 s = 125C G 300 V Switching SOA Capability Positive Temperature Coefficient above 50 A E This is a PbFree Device Applications E SMPS C GG COLLECTOR (FLANGE) TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FGH50N3 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH50N3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: February, 2020 Rev. 3 FGH50N3/DFGH50N3 MAXIMUM RATINGS (T = 25C unless otherwise noted) C Parameter Symbol Ratings Unit Collector to Emitter Breakdown Voltage BV 300 V CES Collector Current Continuous TC = 25C I 75 A C TC = 110C 75 A Collector Current Pulsed (Note 1) I 240 A CM Gate to Emitter Voltage Continuous V 20 V GES Gate to Emitter Voltage Pulsed V 30 V GEM Switching Safe Operating Area at T = 150C, Figure 2 SSOA 150 A at 300 V J Single Pulse Avalanche Energy, I = 30 A, L = 1.78 mH, V = 50 V E 800 mJ CE DD AS Single Pulse Reverse Avalanche Energy, I = 30 A, L = 1.78 mH, V = 50 V E 800 mJ EC DD ARV Power Dissipation Total TC = 25C P 463 W D Power Dissipation Derating TC > 25C 3.7 W/C Operating Junction Temperature Range T 55 to +150 C J Storage Temperature Range Range T 55 to +150 C STG Short Circuit Withstand Time (Note 2) t 8 s SC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. V = 180 V, T = 125C, V = 12 Vdc, R = 5 CE(PK) J GE G PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Tape Width Quantity FGH50N3 FGH50N3 TO247 N/A 30 THERMAL CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit Thermal Resistance, JunctionCase R TO247 0.27 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF STATE CHARACTERISTICS Collector to Emitter Breakdown Voltage BV I = 250 A, V = 0 V, 300 V CES CE GE Emitter to Collector Breakdown Voltage BV I = 10 mA, V = 0 V 15 V ECS EC GE Collector to Emitter Leakage Current I V = 300 V T = 25C 250 A CES CE J T = 125C 2.0 mA J Gate to Emitter Leakage Current I V = 20 V 250 nA GES GE ON STATE CHARACTERISTICs Collector to Emitter Saturation Voltage V I = 30 A, V = 15 V T = 25C 1.30 1.4 V CE(SAT) CE GE J T = 125C 1.25 1.4 V J DYNAMIC CHARACTERISTICS Gate Charge Q I = 30 A, V = 150 V V = 15 V 180 nC G(ON) CE CE GE V = 20 V 228 nC GE Gate to Emitter Threshold Voltage V I = 250 A, V = V 4.0 4.8 5.5 V GE(TH) CE CE GE Gate to Emitter Plateau Voltage V I = 30 A, V = 150 V 7.0 V GEP CE CE www.onsemi.com 2