MOSFET N-Channel QFET 600 V, 0.3 A, 11.5 FQN1N60C Description www.onsemi.com This NChannel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce onstate resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power S D factor correction (PFC), and electronic lamp ballasts. G Features TO92 4.75x4.80 0.3 A, 600 V, R = 11.5 (Max.) V = 10 V, DS(on) GS CASE 135AV I = 0.15 A D Low Gate Charge (Typ. 4.8 nC) D Low Crss (Typ. 3.5 pF) 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C G Symbol Parameter Value Unit V Drain to Source Voltage 600 V DSS S V Gate to Source Voltage 30 V GSS I Drain Current A D Continuous (T = 25C) 0.3 C MARKING DIAGRAM Continuous (T = 100C) 0.18 C I Drain Current Pulsed (Note 1) 1.2 A DM A/FQN E Single Pulsed Avalanche Energy (Note 2) 33 mJ AS 1N60C YWW I Avalanche Current (Note 1) 0.3 A AR E Repetitive Avalanche Energy (Note 1) 0.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation D (T = 25C) 1 W A (T = 25C) 3 W L Derate above 25C 0.02 W/C A = Assembly Site T , T Operating and Storage Temperature Range 55 to +150 C J STG FQN1N60C = Specific Device Code Y = Year of Production T Maximum Lead Temperature for Soldering, 300 C L WW = Work Week Number 1/8 from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Device Package Shipping 2. L = 59 mH, I = 1.1 A, V = 50 V, R = 25 Starting T = 25C. AS DD G J FQN1N60CTA TO92 3LD 2000 / FanFold 3. I 0.3 A, di/dt 200 A/ s, V BV , Starting T = 25C. SD DD DSS J Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: June, 2021 Rev. 2 FQN1N60C/DFQN1N60C THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, JunctiontoLead, Max. (Note 5) 50 C/W JL R Thermal Resistance, JunctiontoAmbient, Max. (Note 6) 140 JA ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTIC BV Drain to Source Breakdown Voltage 600 V I = 250 A, V = 0 V DSS D GS BV Breakdown Voltage Temperature I = 250 A, Referenced to 25C 0.6 V/C DSS D / T Coefficient J I Zero Gate Voltage Drain Current V = 600 V, V = 0 V 50 A DSS DS GS V = 480 V, T = 125C 250 DS C I Gate to Body Leakage Current, Forward V = 30 V, V = 0 V 100 nA GSSF GS DS I Gate to Body Leakage Current, Reverse V = 30 V, V = 0 V 100 nA GSSR GS DS ON CHARACTERISTICS V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250 A GS(th) GS DS D R Static Drain to Source OnResistance V = 10 V, I = 0.15 A 9.3 11.5 DS(on) GS D g Forward Transconductance V = 40 V, I = 0.3 A 0.75 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 25 V, V = 0 V, f = 1.0 MHz 130 170 pF iss DS GS C Output Capacitance 19 25 pF oss C Reverse Transfer Capacitance 3.5 6 pF rss SWITCHING CHARACTERISTICS t TurnOn Delay Time V = 300 V, I = 1.1 A, R = 25 7 24 ns d(on) DD D G (Note 4) t TurnOn Rise Time 21 52 ns r t TurnOff Delay Time 13 36 ns d(off) t TurnOff Fall Time 27 64 ns f V = 480 V, I = 1.1 A, V = 10 V Q Total Gate Charge 4.8 6.2 nC g DS D GS (Note 4) Q Gate to Source Charge 0.7 nC gs Q Gate to Drain Charge 2.7 nC gd DRAINSOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous Drain to Source Diode Forward Current 0.3 A S I Maximum Pulsed Drain to Source Diode Forward Current 1.2 A SM V Drain to Source Diode Forward Voltage V = 0 V, I = 0.3 A 1.4 V SD GS S t Reverse Recovery Time V = 0 V, I = 1.1 A, dI /dt = 100 A/ s 190 ns rr GS S F Q Reverse Recovery Charge 0.53 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature. 5. Reference point of the R is the drain lead. JL 6. When mounted on 3x4.5 FR4 PCB without any pad copper in a still air environment (R is the sum of the junctiontocase and casetoambient thermal resistance. R is determined by the users board design) JA CA www.onsemi.com 2