Product Information

MBRF30H60CTG

MBRF30H60CTG electronic component of ON Semiconductor

Datasheet
Diode Schottky 60V 15A 3-Pin(3+Tab) TO-220 Full-Pak Rail
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

76: USD 0.6058 ea
Line Total: USD 46.04

129 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 76  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
129 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

MBRF30H60CTG
ON Semiconductor

1 : USD 0.676
25 : USD 0.6058
100 : USD 0.3835

129 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 76
Multiples : 1

Stock Image

MBRF30H60CTG
ON Semiconductor

76 : USD 0.6058
100 : USD 0.3835

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
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Additional Infomation About Product

MBRB30H60CT-1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G, NRVBB30H60CTT4G, MBRJ30H60CTG MBRB30H60CT 1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G, NRVBB30H60CTT4G, MBRJ30H60CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V ) T = 159C 15 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz) 30 R Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 260 Operating Junction Temperature (Note 1) T 55 to +175 C J Storage Temperature T 55 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Controlled Avalanche Energy (see test conditions in Figures 11 and 12) W 350 mJ AVAL ESD Ratings: V Machine Model = C > 400 Human Body Model = 3B > 8000 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance C/W (MBRB30H60CT1G and MBR30H60CTG) Junction toCase 2.0 R JC Junction toAmbient 70 R JA (MBRF30H60CTG and MBRJ30H60CTG) Junction toCase R 4.4 JC (MBRB30H60CTT4G and NRVBB30H60CTT4G) Junction toCase R 1.6 JC ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (I = 15 A, T = 25C) 0.62 F C (I = 15 A, T = 125C) 0.56 F C (I = 30 A, T = 25C) 0.78 F C (I = 30 A, T = 125C) 0.71 F C Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated DC Voltage, T = 25C) 0.3 C (Rated DC Voltage, T = 125C) 45 C 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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