MBR30H60CTG ON Semiconductor

MBRB30H60CT-1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G, NRVBB30H60CTT4G, MBRJ30H60CTG MBRB30H60CT 1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G, NRVBB30H60CTT4G, MBRJ30H60CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V ) T = 159C 15 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz) 30 R Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 260 Operating Junction Temperature (Note 1) T 55 to +175 C J Storage Temperature T 55 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Controlled Avalanche Energy (see test conditions in Figures 11 and 12) W 350 mJ AVAL ESD Ratings: V Machine Model = C > 400 Human Body Model = 3B > 8000 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance C/W (MBRB30H60CT1G and MBR30H60CTG) Junction toCase 2.0 R JC Junction toAmbient 70 R JA (MBRF30H60CTG and MBRJ30H60CTG) Junction toCase R 4.4 JC (MBRB30H60CTT4G and NRVBB30H60CTT4G) Junction toCase R 1.6 JC ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (I = 15 A, T = 25C) 0.62 F C (I = 15 A, T = 125C) 0.56 F C (I = 30 A, T = 25C) 0.78 F C (I = 30 A, T = 125C) 0.71 F C Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated DC Voltage, T = 25C) 0.3 C (Rated DC Voltage, T = 125C) 45 C 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.