BFG21W,115 NXP

BFG21W,115 electronic component of NXP
BFG21W,115 NXP
BFG21W,115 RF Bipolar Transistors
BFG21W,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BFG21W,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFG21W,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

Part No.BFG21W,115
Manufacturer:NXP
Category:RF Bipolar Transistors
Description:Transistors RF Bipolar NPN 15V .5A 18GHZ
Datasheet:BFG21W,115 Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
N/A

Obsolete

Availability0
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.4936
N/A

Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9394
10$ 0.8008
100$ 0.6137
500$ 0.5428
1000$ 0.4281
3000$ 0.4105
9000$ 0.4047
24000$ 0.3919
45000$ 0.3802
N/A

Obsolete
   
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Pd - Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFG21W,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFG21W,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG21W UHF power transistor Product specification 1998 Jul 06 Supersedes data of 1997 Nov 21NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING High power gain PIN DESCRIPTION High efficiency 1, 3 emitter 1.9 GHz operating area 2base Linear and non-linear operation. 4 collector APPLICATIONS Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc. 3 4 handbook, halfpage Driver for DCS1800, 1900. DESCRIPTION 21 NPN double polysilicon bipolar power transistor with Top view MSB842 buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. Marking code: P1. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA RF performance at T 60 C in a common emitter test circuit. s f V P G CE L p C MODE OF OPERATION (GHz) (V) (dBm) (dB) (%) Pulsed class-AB <1: 2 t =5ms 1.9 3.6 26 10 typ.55 p 1998 Jul 06 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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