Product Information

BFG21W,115

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Datasheet

Transistors RF Bipolar NPN 15V .5A 18GHZ

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 1 Multiples : 1 BFG21W,115 NXP	1 : USD 1.0631 10 : USD 0.877 100 : USD 0.7787 500 : USD 0.6819 1000 : USD 0.6229 3000 : USD 0.5836	N/A Obsolete

0 - WHS 2 MOQ : 3000 Multiples : 3000 BFG21W,115 NXP	3000 : USD 0.4443	N/A Obsolete

0 - WHS 3 MOQ : 1 Multiples : 1 BFG21W,115 NXP	1 : USD 0.8455 10 : USD 0.7207 100 : USD 0.5523 500 : USD 0.4886 1000 : USD 0.3853 3000 : USD 0.3695 9000 : USD 0.3642 24000 : USD 0.3527 45000 : USD 0.3421	N/A Obsolete

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG21W UHF power transistor Product specification 1998 Jul 06 Supersedes data of 1997 Nov 21NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING High power gain PIN DESCRIPTION High efficiency 1, 3 emitter 1.9 GHz operating area 2base Linear and non-linear operation. 4 collector APPLICATIONS Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc. 3 4 handbook, halfpage Driver for DCS1800, 1900. DESCRIPTION 21 NPN double polysilicon bipolar power transistor with Top view MSB842 buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. Marking code: P1. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA RF performance at T 60 C in a common emitter test circuit. s f V P G CE L p C MODE OF OPERATION (GHz) (V) (dBm) (dB) (%) Pulsed class-AB <1: 2 t =5ms 1.9 3.6 26 10 typ.55 p 1998 Jul 06 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category RF Bipolar Transistors RF Bipolar Transistors
RoHS - XON Y Y
Transistor Type Bipolar Bipolar
Technology Si Si
Transistor Polarity Npn Npn
Operating Frequency 18000 MHz 18000 MHz
Collector- Emitter Voltage VCEO Max 4.5 V 4.5 V
Emitter- Base Voltage VEBO 1 V 1 V
Continuous Collector Current 0.5 A 0.5 A
Pd - Power Dissipation 600 mW 600 mW
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 343 SOT - 343
Packaging Reel Reel
Configuration Single Single
Type Rf Bipolar Small Signal Rf Bipolar Small Signal
Brand Nxp Semiconductors Nxp Semiconductors
Maximum Dc Collector Current 0.5 A 0.5 A
Factory Pack Quantity : 3000 3000
Collector- Base Voltage Vcbo 15 V 15 V
Dc Current Gain Hfe Max 40 40
Height 1 mm 1 mm
Length 2.2 mm 2.2 mm
Width 1.35 mm 1.35 mm
Cnhts 8541210000 8541210000
Gain Bandwidth Product Ft 18000 Mhz (Min) 18000 Mhz (Min)
Hts Code 8541210075 8541210075
Mxhts 85412101 85412101
Product Type Rf Bipolar Transistors Rf Bipolar Transistors
Subcategory Transistors Transistors
Taric 8541210000 8541210000