NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated NGTB25N120IHLWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.65 C/W JC Thermal resistance junctiontocase, for Diode R 2.0 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 25 A V 1.85 2.3 V GE C CEsat V = 15 V, I = 25 A, T = 150C 2.1 GE C J Gateemitter threshold voltage V 4.5 5.5 6.5 V V = V , I = 250 A GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.5 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 150C 2.0 GE CE J = Gate leakage current, collectoremitter V = 20 V, V = 0 V I 100 nA GE CE GES short circuited DYNAMIC CHARACTERISTIC Input capacitance C 4700 pF ies Output capacitance C 155 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 100 res Gate charge total Q 200 nC g Gate to emitter charge V = 600 V, I = 25 A, V = 15 V Q 38 ge CE C GE Gate to collector charge Q 100 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn off delay time t 235 ns d(off) T = 25C J V = 600 V, I = 25 A CC C Fall time t 160 f R = 10 g V = 0 V/ 15V Turn off switching loss E 0.8 mJ GE off Turn off delay time t 250 ns d(off) T = 125C J V = 600 V, I = 25 A CC C Fall time t 225 f R = 10 g V = 0 V/ 15V Turn off switching loss E 1.9 mJ GE off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 25 A V 1.7 1.8 V GE F F V = 0 V, I = 25 A, T = 150C 1.8 GE F J