NSVBAS21AHT1G ON Semiconductor

BAS21AHT1G Low Leakage Switching Diode Features NSV Prefix for Automotive and Other Applications Requiring BAS21AHT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I R (V = 200 Vdc) 40 nAdc R (V = 200 Vdc, T = 150C) 100 Adc R J Reverse Breakdown Voltage V 250 Vdc (BR) (I = 100 Adc) BR Forward Voltage V mV F (I = 100 mAdc) 1000 F (I = 200 mAdc) 1250 F Diode Capacitance C 5.0 pF D (V = 0, f = 1.0 MHz) R Reverse Recovery Time t 50 ns rr (I = I = 30 mAdc, R = 100 ) F R L 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 3.0 mA R(REC) 50 OUTPUT 50 INPUT I R V PULSE SAMPLING R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 30 mA MEASURED F R at i = 3.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 30 mA. F Notes: 2. Input pulse is adjusted so I is equal to 30 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit 1200 7000 6000 T = 55C A T = 155C A 1000 5000 25C 4000 3000 800 155C 6 600 5 4 400 3 T = 25C A 2 200 1 T = 55C A 1 0 1 10 100 1000 1 2 5 10 20 50 100 200 300 FORWARD CURRENT (mA) REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage