Product Information

NSVBAS21HT3G

NSVBAS21HT3G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Diodes - General Purpose, Power, Switching SS SWCH DIO 250V
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0496 ea
Line Total: USD 0.05

19273 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
19273 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

NSVBAS21HT3G
ON Semiconductor

1 : USD 0.0496
10 : USD 0.0491
25 : USD 0.0486
100 : USD 0.0444
250 : USD 0.0402
500 : USD 0.0359
1000 : USD 0.0317
3000 : USD 0.0311
6000 : USD 0.0311
15000 : USD 0.0311

19273 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 242
Multiples : 1

Stock Image

NSVBAS21HT3G
ON Semiconductor

242 : USD 0.0444
250 : USD 0.0402
500 : USD 0.0359
1000 : USD 0.0317
3000 : USD 0.0311

155200 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 10000
Multiples : 10000

Stock Image

NSVBAS21HT3G
ON Semiconductor

10000 : USD 0.0466
40000 : USD 0.0456

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

High Voltage Switching Diode BAS21H Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS HIGH VOLTAGE Compliant SWITCHING DIODE MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Continuous Reverse Voltage V 250 V R CATHODE ANODE Repetitive Peak Reverse Voltage V 250 V RRM Peak Forward Current I 200 mA F Repetitive Peak Forward Current I 500 mA MARKING FRM 2 DIAGRAM NonRepetitive Peak Forward Surge I 2.5 A FSM(surge) Current, 60 Hz NonRepetitive Peak Forward Current I A SOD323 1 FSM (Square Wave, T = 25C prior to JS M CASE 477 J surge) STYLE 1 t = 1 s 20 t = 10 s 20 t = 100 s 10 JS = Device Code t = 1 ms 4 1 t = 1 s M = Date Code* = PbFree Package THERMAL CHARACTERISTICS (Note: Microdot may be in either location) Characteristic Symbol Max Unit *Date Code orientation may vary depending up- on manufacturing location. Total Device Dissipation FR5 Board, P 200 mW D (Note 1) T = 25C A Derate above 25C 1.57 mW/C Thermal Resistance, C/W ORDERING INFORMATION JunctiontoAmbient R 635 JA JunctiontoLead R 240 Device Package Shipping JL JunctiontoTop R 436 JT BAS21HT1G, SOD323 3000 / Tape & Reel Junction and Storage Temperature T , T 55 to C J stg NSVBAS21HT1G (PbFree) Range +150 BAS21HT3G, SOD323 10000 / Tape & Stresses exceeding those listed in the Maximum Ratings table may damage the NSVBAS21HT3G (PbFree) Reel device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. For information on tape and reel specifications, 1. FR5 Minimum Pad including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2020 Rev. 14 BAS21HT1/DBAS21H ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I Adc R (V = 200 Vdc) 0.1 R (V = 200 Vdc, T = 150C) 100 R J Reverse Breakdown Voltage V 250 Vdc (BR) (I = 100 Adc) BR Forward Voltage V mV F (I = 100 mAdc) 1000 F (I = 200 mAdc) 1250 F Diode Capacitance C 5.0 pF D (V = 0, f = 1.0 MHz) R Reverse Recovery Time t 50 ns rr (I = I = 30 mAdc, R = 100 ) F R L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H 10% rr 0.1 F 90% D.U.T. i = 3.0 mA R(REC) 50 INPUT 50 OUTPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 30 mA MEASURED F R at i = 3.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 30 mA. F Notes: 2. Input pulse is adjusted so I is equal to 30 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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