NTB6410AN, NTP6410AN, NVB6410AN MOSFET Power, N-Channel 100 V, 76 A, 13 m www.onsemi.com Features I MAX D Low R DS(on) V R MAX (Note 1) (BR)DSS DS(ON) High Current Capability 100 V 13 m 10 V 76 A 100% Avalanche Tested NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 NChannel Qualified and PPAP Capable D These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS (T = 25C Unless otherwise specified) J G Parameter Symbol Value Unit DraintoSource Voltage V 100 V DSS S GatetoSource Voltage Continuous V 20 V GS 4 Continuous Drain Steady T = 25C I 76 A C D Current R State JC 4 T = 100C 54 C Power Dissipation Steady T = 25C P 188 W C D 1 2 R State JC 3 Pulsed Drain Current t = 10 s I 305 A p DM 2 TO220AB D PAK Operating Junction and Storage Temperature T , T 55 to C J stg CASE 221A CASE 418B Range +175 1 STYLE 5 STYLE 2 2 3 Source Current (Body Diode) I 76 A S Single Pulse DraintoSource Avalanche E 500 mJ AS MARKING DIAGRAM Energy (V = 50 Vdc, V = 10 Vdc, DD GS & PIN ASSIGNMENT I = 57.7 A, L = 0.3 mH, R = 25 ) L(pk) G 4 4 Drain Lead Temperature for Soldering T 260 C L Drain Purposes, 1/8 from Case for 10 Seconds THERMAL RESISTANCE RATINGS NTB Parameter Symbol Max Unit NTP 6410ANG 6410ANG AYWW JunctiontoCase (Drain) Steady State R 0.8 C/W JC AYWW JunctiontoAmbient (Note 1) 32 R JA 2 1 3 1 3 Drain Stresses exceeding those listed in the Maximum Ratings table may damage the Gate Source Gate Source device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 6410AN = Specific Device Code 1. Surface mounted on FR4 board using 1 sq in pad size, Drain (Cu Area 1.127 sq in 2 oz including traces). G = PbFree Device A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 2 NTB6410AN/DNTB6410AN, NTP6410AN, NVB6410AN ELECTRICAL CHARACTERISTICS (T = 25C Unless otherwise specified) J Characteristics Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage Temper- V /T 94 mV/C (BR)DSS J ature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 100 V DS T = 150C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) GS DS D Negative Threshold Temperature Coefficient V /T 9.0 mV/C GS(th) J DraintoSource OnResistance R V = 10 V, I = 76 A 11 13 m DS(on) GS D V = 10 V, I = 20 A 10 12 GS D Forward Transconductance g V = 5 V, I = 20 A 40 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 4500 pF iss V = 25 V, V = 0 V, DS GS Output Capacitance C 650 oss f = 1 MHz Reverse Transfer Capacitance C 250 rss Total Gate Charge Q 120 nC G(TOT) Threshold Gate Charge Q 5.2 G(TH) V = 10 V, V = 80 V, GS DS GatetoSource Charge Q 20 GS I = 76 A D GatetoDrain Charge Q 57 GD Plateau Voltage V 5.1 V GP Gate Resistance R 2.4 G SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS ns TurnOn Delay Time t 17 d(on) Rise Time t 170 r V = 10 V, V = 80 V, GS DD I = 76 A, R = 6.2 D G TurnOff Delay Time t 120 d(off) Fall Time t 190 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 1.0 1.3 V SD J I = 76 A S T = 125C 0.9 J Reverse Recovery Time t 93 ns rr Charge Time t 69 a V = 0 V, I = 76 A, GS S dI /dt = 100 A/ s SD Discharge Time t 24 b Reverse Recovery Charge Q 300 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2