NTB75N06T4G ON Semiconductor

NTB75N06T4G electronic component of ON Semiconductor
NTB75N06T4G ON Semiconductor
NTB75N06T4G MOSFETs
NTB75N06T4G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of NTB75N06T4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTB75N06T4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.NTB75N06T4G
Manufacturer:ON Semiconductor
Category:MOSFETs
Description:Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) D2PAK T/R
Datasheet:NTB75N06T4G Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
  
2: USD 8.0838 ea
Line Total: USD 16.17 
Availability : 0
  
QtyUnit Price
2$ 8.0838
25$ 5.9301
100$ 4.0495
  

Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 2
Multiples : 1
QtyUnit Price
2$ 8.0838
25$ 5.9301
100$ 4.0495

   
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We are delighted to provide the NTB75N06T4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTB75N06T4G and other electronic components in the MOSFETs category and beyond.

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NTP75N06, NTB75N06 Power MOSFET 75 Amps, 60 Volts, NChannel 2 TO220 and D PAK Designed for low voltage, high speed switching applications in NTP75N06, NTB75N06 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 1) V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 60 71 GS D Temperature Coefficient (Positive) 73 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 60 Vdc, V = 0 Vdc) 10 DS GS (V = 60 Vdc, V = 0 Vdc, T = 150C) 100 DS GS J GateBody Leakage Current (V = 20 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (Note 1) V Vdc GS(th) (V = V , I = 250 Adc) 2.0 2.8 4.0 DS GS D Threshold Temperature Coefficient (Negative) 8.0 mV/C Static DraintoSource OnResistance (Note 1) R m DS(on) (V = 10 Vdc, I = 37.5 Adc) 8.2 9.5 GS D Static DraintoSource OnVoltage (Note 1) V Vdc DS(on) (V = 10 Vdc, I = 75 Adc) 0.72 0.86 GS D (V = 10 Vdc, I = 37.5 Adc, T = 150C) 0.63 GS D J Forward Transconductance (Note 1) (V = 15 Vdc, I = 37.5 Adc) g 40.2 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 3220 4510 pF iss (V(V = 25 Vdc, V25 Vd V = 0 Vdc,0Vd DS GS Output Capacitance C 1020 1430 oss ff = 1.0 MHz = 1.0 MHz)) Transfer Capacitance C 234 330 rss SWITCHING CHARACTERISTICS (Note 2) TurnOn Delay Time t 16 25 ns d(on) Rise Time t 112 155 r (V(V = 30 Vdc, I 30 Vdc, I = 75 Adc,75 Adc, DDDD DD V = 10 Vdc, R = 9.1 ) (Note 1) GS G TurnOff Delay Time t 90 125 d(off) Fall Time t 100 140 f Gate Charge Q 92 130 nC T (V(V = 48 Vdc, I48 Vd I = 75 Adc,75 Ad DS D Q 14 1 VV = 10 Vdc= 10 Vdc)) ((NoteNote 1 1)) GSGS Q 44 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 75 Adc, V = 0 Vdc) (Note 1) V 1.0 1.1 Vdc S GS SD (I = 75 Adc, V = 0 Vdc, T = 150C) 0.9 S GS J Reverse Recovery Time t 77 ns rr (I(I = 75 Adc, V75 Ad V = 0 Vdc,0Vd S GS t 49 a dIdI /dt/dt = 100 A/ = 100 A/ ss)) (Note(Note 1 1)) SS t 28 b Reverse Recovery Stored Charge Q 0.16 C RR 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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