Product Information

NTD4979N-35G

NTD4979N-35G electronic component of ON Semiconductor

Datasheet
N-Channel 30 V 9.4A (Ta), 41A (Tc) 1.38W (Ta), 26.3W (Tc) Through Hole I-PAK

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 2175
Multiples : 1

Stock Image

NTD4979N-35G
ON Semiconductor

2175 : USD 0.3055
N/A

Obsolete
0 - WHS 2

MOQ : 750
Multiples : 750

Stock Image

NTD4979N-35G
ON Semiconductor

750 : USD 0.6014
N/A

Obsolete
0 - WHS 3

MOQ : 2325
Multiples : 2325

Stock Image

NTD4979N-35G
ON Semiconductor

2325 : USD 0.3398
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

Stock Image

NTD4979N-35G
ON Semiconductor

1 : USD 0.8317
10 : USD 0.7333
75 : USD 0.5114
525 : USD 0.439
1050 : USD 0.3844
2175 : USD 0.3548
4350 : USD 0.3394
10875 : USD 0.3394
26100 : USD 0.3275
N/A

Obsolete
0 - WHS 5

MOQ : 2175
Multiples : 2175

Stock Image

NTD4979N-35G
ON Semiconductor

2175 : USD 0.2916
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Brand
Factory Pack Quantity :
Configuration
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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NTD4979N Power MOSFET 30 V, 41 A, Single NChannel, DPAK/IPAK Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NTD4979N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit C/W Junction toCase (Drain) R 5.7 JC Junction toTAB (Drain) R 4.3 JC TAB JunctiontoAmbient Steady State (Note 3) R 58.6 JA JunctiontoAmbient Steady State (Note 4) R 108.6 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 17 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 1.8 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 4.5 GS(TH) J mV/C Coefficient DraintoSource On Resistance R V = 10 V I = 30 A 6.9 9.0 DS(on) GS D I = 15 A 6.9 D m V = 4.5 V I = 30 A 13.6 19 GS D I = 15 A 13.2 D Forward Transconductance g V = 1.5 V, I = 30 A 36 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 837 ISS Output Capacitance C 347 V = 0 V, f = 1.0 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 180 RSS Total Gate Charge Q 9.0 G(TOT) Threshold Gate Charge Q 1.42 G(TH) V = 4.5 V, V = 15 V, I = 30 A nC GS DS D GatetoSource Charge Q 2.8 GS GatetoDrain Charge Q 4.8 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 30 A 16.5 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 10 d(ON) Rise Time t 27 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G Turn Off Delay Time t 13.3 d(OFF) Fall Time t 6.4 f 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. 7. Assume terminal length of 110 mils.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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