NTB75N03R, NTP75N03R
Power MOSFET
75 Amps, 25 Volts
2
NChannel D PAK, TO220
Features
NTB75N03R, NTP75N03R
ELECTRICAL CHARACTERISTICS (T = 25C Unless otherwise specified)
J
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3) V V
(br)DSS dc
(V = 0 V , I = 250 A ) 25 28
GS dc D dc
Temperature Coefficient (Positive) 20.5 mV/C
Zero Gate Voltage Drain Current I
A
DSS dc
(V = 20 V , V = 0 V ) 1.0
DS dc GS dc
(V = 20 V , V = 0 V , T = 150C) 10
DS dc GS dc J
GateBody Leakage Current I nA
GSS dc
(V = 20 V , V = 0 V ) 100
GS dc DS dc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3) V V
GS(th) dc
(V = V , I = 250 A ) 1.0 1.5 2.0
DS GS D dc
Threshold Temperature Coefficient (Negative) 4.0 mV/C
Static DraintoSource OnResistance (Note 3) R m
DS(on)
(V = 4.5 V , I = 20 A ) 8.1 13
GS dc D dc
(V = 10 V , I = 20 A ) 5.6 8.0
GS dc D dc
Forward Transconductance (Note 3) g Mhos
FS
(V = 10 V , I = 15 A ) 27
DS dc D dc
DYNAMIC CHARACTERISTICS
Input Capacitance C 1333 pF
iss
(V = 20 V , V = 0 V,
DS dc GS
Output Capacitance C 600
oss
f = 1 MHz)
Transfer Capacitance C 218
rss
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time t 6.9 ns
d(on)
Rise Time t 1.3
r
(V = 10 V , V = 10 V ,
GS dc DD dc
I = 30 A , R = 3)
D dc G
TurnOff Delay Time t 18.4
d(off)
Fall Time t 5.5
f
Gate Charge Q 13.2 nC
T
(V = 5 V , I = 30 A ,
GS dc D dc
Q 3.3
1
V = 10 V ) (Note 3)
DS dc
Q 6.2
2
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage V V
SD dc
(I = 20 A , V = 0 V ) (Note 3) 0.86 1.2
S dc GS dc
(I = 20 A , V = 0 V , T = 125C) 0.73
S dc GS dc J
Reverse Recovery Time t 15.6 ns
rr
t 13.8
a
(I = 35 A , V = 0 V ,
S dc GS dc
dI /dt = 100 A/s) (Note 3)
S
t 1.78
b
Reverse Recovery Stored Charge Q 0.004 C
RR
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperatures.