ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET - Power, Single 2 N-Channel, D PAK7 60 V, 2.1 m , 211 A NTBGS002N06C Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G Lowers Switching Noise/EMI V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 2.1 m 12 V 60 V 211 A 2.2 m 10 V Typical Applications Power Tools, Battery Operated Vacuums UAV/Drones, Material Handling 1. Gate D (Pin 4, tab) 2. Source BMS/Storage, Home Automation 3. Source 4. Drain MAXIMUM RATINGS (T = 25C unless otherwise noted) J 5. Source 6. Source Parameter Symbol Value Unit G (Pin 1) 7. Source DraintoSource Voltage V 60 V DSS S (Pins 2,3,5,6,7) GatetoSource Voltage V 20 V GS NCHANNEL MOSFET Continuous Drain I 211 A D Current R (Note 2) JC Steady T = 25C C State Power Dissipation P 178 W D R (Note 2) MARKING JC 4 DIAGRAM Continuous Drain I 30 A D Current R JA 1 (Notes 1, 2) Steady T = 25C 2 BGS002 A State 3 5 6 N06C Power Dissipation P 3.7 W D 7 R (Notes 1, 2) AYWWG JA 2 D PAK7 CASE 221BP Pulsed Drain Current T = 25C, t = 100 s I 835 A A p DM Operating Junction and Storage Temperature T , T 55 to C BGS002N06C = Specific Device Code J stg Range +175 A = Assembly Location Y = Year Source Current (Body Diode) I 148 A S WW = Work Week G = PbFree Package Single Pulse DraintoSource Avalanche E 357 mJ AS Energy (I = 26.7 A , L = 1 mH) L pk Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be 2 assumed, damage may occur and reliability may be affected. NTBGS002N06C 800 / Tape & D PAK7 2 1. Surfacemounted on FR4 board using a 1 in , 1 oz. Cu pad. Reel (PbFree) 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: November, 2020 Rev. 1 NTBGS002N06C/D