X-On Electronics has gained recognition as a prominent supplier of NTBGS3D5N06C MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTBGS3D5N06C MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTBGS3D5N06C ON Semiconductor

NTBGS3D5N06C electronic component of ON Semiconductor
NTBGS3D5N06C ON Semiconductor
NTBGS3D5N06C MOSFETs
NTBGS3D5N06C  Semiconductors

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See Product Specifications
Part No. NTBGS3D5N06C
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET D2PAK7 60V 3.5MO
Datasheet: NTBGS3D5N06C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
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Multiples : 1
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Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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We are delighted to provide the NTBGS3D5N06C from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTBGS3D5N06C and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET - Power, Single 2 N-Channel, D PAK7 60 V, 3.7 m , 127 A NTBGS3D5N06C Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G Lowers Switching Noise/EMI V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3.7 m 12 V Compliant 60 V 127 A 4.1 m 10 V Typical Applications Power Tools, Battery Operated Vacuums 1. Gate D (Pin 4, tab) UAV/Drones, Material Handling 2. Source BMS/Storage, Home Automation 3. Source 4. Drain 5. Source MAXIMUM RATINGS (T = 25C unless otherwise noted) J 6. Source G (Pin 1) Parameter Symbol Value Unit 7. Source DraintoSource Voltage V 60 V DSS S (Pins 2,3,5,6,7) GatetoSource Voltage V 20 V GS NCHANNEL MOSFET Continuous Drain I 127 A D Current R (Note 2) JC Steady T = 25C C State Power Dissipation P 115 W D MARKING R (Note 2) JC 4 DIAGRAM Continuous Drain I 22 A D Current R JA 1 (Notes 1, 2) Steady 2 BGS3D5 3 T = 25C A 5 State N06C 6 7 Power Dissipation P 3.7 W D AYWWG 2 R (Notes 1, 2) D PAK7 JA CASE 221BP Pulsed Drain Current T = 25C, t = 100 s I 491 A A p DM BGS3D5N06C= Specific Device Code Operating Junction and Storage Temperature T , T 55 to C J stg A = Assembly Location Range +175 Y = Year Source Current (Body Diode) I 95 A WW = Work Week S G = PbFree Package Single Pulse DraintoSource Avalanche E 176 mJ AS Energy (I = 18.8 A , L = 1 mH) L pk Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be 2 assumed, damage may occur and reliability may be affected. NTBGS3D5N06C D PAK7 800 / Tape & 2 1. Surfacemounted on FR4 board using a 1 in , 1 oz. Cu pad. Reel (PbFree) 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: November, 2020 Rev. 1 NTBGS3D5N06C/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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