NTLJD3115PT1G ON Semiconductor

NTLJD3115PT1G electronic component of ON Semiconductor
NTLJD3115PT1G ON Semiconductor
NTLJD3115PT1G MOSFETs
NTLJD3115PT1G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of NTLJD3115PT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTLJD3115PT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.NTLJD3115PT1G
Manufacturer:ON Semiconductor
Category:MOSFETs
Description:MOSFET PFET 2X2 20V 4.1A 106MOHM
Datasheet:NTLJD3115PT1G Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
  
1: USD 1.1938 ea
Line Total: USD 1.19 
Availability : 737
  
Ship by Mon. 22 Jun to Wed. 24 Jun
QtyUnit Price
1$ 1.1938
10$ 0.7475
100$ 0.4367
500$ 0.3465
1000$ 0.3168
3000$ 0.2684
6000$ 0.2563
  

Availability737
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1938
10$ 0.7475
100$ 0.4367
500$ 0.3465
1000$ 0.3168
3000$ 0.2684
6000$ 0.2563

   
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Product Category
RoHS - XON
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Transistor Polarity
Minimum Operating Temperature
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTLJD3115PT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTLJD3115PT1G and other electronic components in the MOSFETs category and beyond.

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NTLJD3115P MOSFET Power, Dual, P-Channel, WDFN 2X2 mm -20 V, -4.1 A Features www.onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction V R MAX I MAX (Note 1) (BR)DSS DS(on) D 2x2 mm Footprint Same as SC88 100 m 4.5 V Lowest R Solution in 2x2 mm Package DS(on) 20 V 135 m 2.5 V 4.1 A 1.8 V R Rating for Operation at Low Voltage Gate Drive Logic DS(on) 200 m 1.8 V Level Low Profile (< 0.8 mm) for Easy Fit in Thin Environments S1 S2 Bidirectional Current Flow with Common Source Configuration This is a PbFree Device G1 G2 Applications Optimized for Battery and Load Management Applications in Portable Equipment LiIon Battery Charging and Protection Circuits D1 D2 High Side Load Switch PCHANNEL MOSFET PCHANNEL MOSFET MARKING D2 MAXIMUM RATINGS (T = 25C unless otherwise noted) J D1 DIAGRAM Parameter Symbol Value Unit 1 6 WDFN6 JDM DraintoSource Voltage V 20 V DSS 2 5 CASE 506AN 3 4 GatetoSource Voltage V 8.0 V GS Pin 1 JD = Specific Device Code Continuous Drain I A T = 25C 3.3 D Steady A Current (Note 1) M = Date Code State T = 85C 2.4 A = PbFree Package t 5 s T = 25C 4.1 A (Note: Microdot may be in either location) Power Dissipation Steady P 1.5 W D PIN CONNECTIONS (Note 1) State T = 25C A t 5 s 2.3 D1 Continuous Drain I A S1 D1 T = 25C 2.3 A D 1 6 Current (Note 2) T = 85C 1.6 Steady A State G1 Power Dissipation P 0.71 W 2 5 G2 D T = 25C A (Note 2) D2 Pulsed Drain Current t = 10 s I 20 A p DM D2 3 4 S2 Operating Junction and Storage Temperature T , T 55 to C J STG 150 (Top View) Source Current (Body Diode) (Note 2) I 1.9 A S ORDERING INFORMATION Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the NTLJD3115PT1G WDFN6 3000/Tape & Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq NTLJD3115PTAG WDFN6 3000/Tape & Reel 2 oz including traces). (PbFree) 2. Surface Mounted on FR4 Board using the minimum recommended pad size 2 For information on tape and reel specifications, of 30 mm , 2 oz Cu. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: May, 2019 Rev. 7 NTLJD3115P/DNTLJD3115P THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit SINGLE OPERATION (SELFHEATED) JunctiontoAmbient Steady State (Note 3) R 83 JA JunctiontoAmbient Steady State Min Pad (Note 4) R 177 C/W JA JunctiontoAmbient t 5 s (Note 3) R 54 JA DUAL OPERATION (EQUALLY HEATED) JunctiontoAmbient Steady State (Note 3) R 58 JA JunctiontoAmbient Steady State Min Pad (Note 4) R 133 C/W JA JunctiontoAmbient t 5 s (Note 3) R 40 JA 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2 4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm , 2 oz Cu). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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