NTLJD3115PT1G ON Semiconductor

NTLJD3115PT1G electronic component of ON Semiconductor
NTLJD3115PT1G ON Semiconductor
NTLJD3115PT1G MOSFETs
NTLJD3115PT1G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of NTLJD3115PT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTLJD3115PT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. NTLJD3115PT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET PFET 2X2 20V 4.1A 106MOHM
Datasheet: NTLJD3115PT1G Datasheet (PDF)
Price (USD)
3000: USD 0.156 ea
Line Total: USD 468 
Availability : 0
  
QtyUnit Price
3000$ 0.156
6000$ 0.156
9000$ 0.156
15000$ 0.156

Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.156
6000$ 0.156
9000$ 0.156
15000$ 0.156


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6012


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0549
10$ 1.0299
30$ 1.0123
100$ 0.9946


Availability 0
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.95
10$ 0.9193
100$ 0.5003
500$ 0.3933
1000$ 0.3042
3000$ 0.2763


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 27
Multiples : 1
QtyUnit Price
27$ 0.4578
100$ 0.3555
250$ 0.3158
500$ 0.3094

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
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Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTLJD3115PT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTLJD3115PT1G and other electronic components in the MOSFETs category and beyond.

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NTLJD3115P MOSFET Power, Dual, P-Channel, WDFN 2X2 mm -20 V, -4.1 A Features www.onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction V R MAX I MAX (Note 1) (BR)DSS DS(on) D 2x2 mm Footprint Same as SC88 100 m 4.5 V Lowest R Solution in 2x2 mm Package DS(on) 20 V 135 m 2.5 V 4.1 A 1.8 V R Rating for Operation at Low Voltage Gate Drive Logic DS(on) 200 m 1.8 V Level Low Profile (< 0.8 mm) for Easy Fit in Thin Environments S1 S2 Bidirectional Current Flow with Common Source Configuration This is a PbFree Device G1 G2 Applications Optimized for Battery and Load Management Applications in Portable Equipment LiIon Battery Charging and Protection Circuits D1 D2 High Side Load Switch PCHANNEL MOSFET PCHANNEL MOSFET MARKING D2 MAXIMUM RATINGS (T = 25C unless otherwise noted) J D1 DIAGRAM Parameter Symbol Value Unit 1 6 WDFN6 JDM DraintoSource Voltage V 20 V DSS 2 5 CASE 506AN 3 4 GatetoSource Voltage V 8.0 V GS Pin 1 JD = Specific Device Code Continuous Drain I A T = 25C 3.3 D Steady A Current (Note 1) M = Date Code State T = 85C 2.4 A = PbFree Package t 5 s T = 25C 4.1 A (Note: Microdot may be in either location) Power Dissipation Steady P 1.5 W D PIN CONNECTIONS (Note 1) State T = 25C A t 5 s 2.3 D1 Continuous Drain I A S1 D1 T = 25C 2.3 A D 1 6 Current (Note 2) T = 85C 1.6 Steady A State G1 Power Dissipation P 0.71 W 2 5 G2 D T = 25C A (Note 2) D2 Pulsed Drain Current t = 10 s I 20 A p DM D2 3 4 S2 Operating Junction and Storage Temperature T , T 55 to C J STG 150 (Top View) Source Current (Body Diode) (Note 2) I 1.9 A S ORDERING INFORMATION Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the NTLJD3115PT1G WDFN6 3000/Tape & Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq NTLJD3115PTAG WDFN6 3000/Tape & Reel 2 oz including traces). (PbFree) 2. Surface Mounted on FR4 Board using the minimum recommended pad size 2 For information on tape and reel specifications, of 30 mm , 2 oz Cu. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: May, 2019 Rev. 7 NTLJD3115P/DNTLJD3115P THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit SINGLE OPERATION (SELFHEATED) JunctiontoAmbient Steady State (Note 3) R 83 JA JunctiontoAmbient Steady State Min Pad (Note 4) R 177 C/W JA JunctiontoAmbient t 5 s (Note 3) R 54 JA DUAL OPERATION (EQUALLY HEATED) JunctiontoAmbient Steady State (Note 3) R 58 JA JunctiontoAmbient Steady State Min Pad (Note 4) R 133 C/W JA JunctiontoAmbient t 5 s (Note 3) R 40 JA 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2 4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm , 2 oz Cu). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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