X-On Electronics has gained recognition as a prominent supplier of NTMFS6H848NLT1G MOSFET across the USA, India, Europe, Australia, and various other global locations. NTMFS6H848NLT1G MOSFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

NTMFS6H848NLT1G ON Semiconductor

NTMFS6H848NLT1G electronic component of ON Semiconductor
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Part No.NTMFS6H848NLT1G
Manufacturer: ON Semiconductor
Category: MOSFET
Description: MOSFET T8 80V LL SO8FL
Datasheet: NTMFS6H848NLT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.5109 ea
Line Total: USD 2.51

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 2.5109
10 : USD 0.9283
100 : USD 0.6828
500 : USD 0.5396
1000 : USD 0.4317
1500 : USD 0.391

   
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We are delighted to provide the NTMFS6H848NLT1G from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMFS6H848NLT1G and other electronic components in the MOSFET category and beyond.

MOSFET - Power, Single N-Channel 80 V, 8.8 m , 59 A NTMFS6H848NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX These Devices are PbFree and are RoHS Compliant (BR)DSS DS(ON) D 8.8 m 10 V MAXIMUM RATINGS (T = 25C unless otherwise noted) 80 V 59 A J 11 m 4.5 V Parameter Symbol Value Unit DraintoSource Voltage V 80 V DSS GatetoSource Voltage V 20 V GS D (5,6) Continuous Drain T = 25C I 59 A C D Current R JC T = 100C 42 (Notes 1, 3) C Steady State Power Dissipation T = 25C P 73 W C D G (4) R (Note 1) JC T = 100C 37 C Continuous Drain T = 25C I 13 A A D S (1,2,3) Current R JA T = 100C 9.0 (Notes 1, 2, 3) A NCHANNEL MOSFET Steady State Power Dissipation T = 25C P 3.7 W A D R (Notes 1, 2) JA T = 100C 1.8 A MARKING DIAGRAM Pulsed Drain Current T = 25C, t = 10 s I 319 A A p DM D Operating Junction and Storage Temperature T , T 55 to C J stg 1 Range + 175 S D XXXXXX DFN5 S Source Current (Body Diode) I 61 A S (SO8FL) AYWZZ S CASE 488AA Single Pulse DraintoSource Avalanche E 267 mJ G D AS STYLE 1 Energy (I = 3.4 A) D L(pk) Lead Temperature for Soldering Purposes T 260 C XXXXXX = 6H848L L (1/8 from case for 10 s) XXXXXX = (NTMFS6H848NL) A = Assembly Location Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be W = Work Week assumed, damage may occur and reliability may be affected. ZZ = Lot Traceability THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit ORDERING INFORMATION JunctiontoCase Steady State R 2.0 C/W JC See detailed ordering, marking and shipping information in the JunctiontoAmbient Steady State (Note 2) R 41 JA package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: December, 2019 Rev. 0 NTMFS6H848NL/DNTMFS6H848NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 80 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 45.7 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J V = 80 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 70 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.2 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 10 A 7.2 8.8 DS(on) GS D m V = 4.5 V I = 10 A 8.8 11 GS D Forward Transconductance g V =8 V, I = 10 A 84 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 1420 ISS Output Capacitance C 192 V = 0 V, f = 1 MHz, V = 40 V pF OSS GS DS Reverse Transfer Capacitance C 11 RSS Total Gate Charge Q V = 10 V, V = 40 V I = 30 A 25 G(TOT) GS DS D Threshold Gate Charge Q 2.4 G(TH) nC GatetoSource Charge Q 4.6 GS GatetoDrain Charge Q 4.3 V = 4.5 V, V = 40 V I = 30 A GD GS DS D Plateau Voltage V 3.1 V GP Total Gate Charge Q 12 nC G(TOT) SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 37 d(ON) Rise Time t 87 r V = 4.5 V, V = 64 V, GS DS ns I = 30 A, R = 2.5 D G TurnOff Delay Time t 22 d(OFF) Fall Time t 8 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.81 1.2 SD J V = 0 V, GS V I = 10 A S T = 125C 0.65 J Reverse Recovery Time t 39 RR Charge Time t 23 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 30 A S Discharge Time t 16 b Reverse Recovery Charge Q 36 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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