NTMYS021N06CL Power MOSFET 60 V, 21 m , 27 A, Single NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G LFPAK4 Package, Industry Standard These Devices are PbFree and are RoHS Compliant V R MAX I MAX (BR)DSS DS(ON) D 21 m 10 V MAXIMUM RATINGS (T = 25C unless otherwise noted) 60 V 27 A J 31.5 m 4.5 V Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS D (5) GatetoSource Voltage V 20 V GS Continuous Drain Steady T = 25C I 27 A C D Current R State JC T = 100C 15 (Notes 1, 2, 3) C Power Dissipation T = 25C P 28 W G (4) C D R (Notes 1, 2) JC T = 100C 9.0 C S (1,2,3) Continuous Drain Steady T = 25C I 9.8 A A D State Current R JA NCHANNEL MOSFET T = 100C 6.9 (Notes 1, 2, 3) A Power Dissipation T = 25C P 3.8 W A D R (Notes 1 & 2) MARKING JA T = 100C 1.9 A DIAGRAM Pulsed Drain Current T = 25C, t = 10 s I 131 A A p DM D Operating Junction and Storage Temperature T , T 55 to C J stg + 175 021N06 CL Source Current (Body Diode) I 23.5 A S LFPAK4 AWLYW CASE 760AB Single Pulse DraintoSource Avalanche E 43 mJ AS Energy (I = 1.1 A) L(pk) 1 S SS G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) 021N06CL = Specific Device Code A = Assembly Location Stresses exceeding those listed in the Maximum Ratings table may damage the WL = Wafer Lot device. If any of these limits are exceeded, device functionality should not be Y = Year assumed, damage may occur and reliability may be affected. W = Work Week THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit ORDERING INFORMATION JunctiontoCase Steady State 5.3 C/W R JC See detailed ordering, marking and shipping information on page 5 of this data sheet. JunctiontoAmbient Steady State (Note 2) R 39 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: April, 2019 Rev. 0 NTMYS021N06CL/DNTMYS021N06CL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 28 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 60 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 16 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 10 A 18 21 DS(on) GS D m V = 4.5 V I = 10 A 26 31.5 GS D Forward Transconductance g V =15 V, I = 10 A 37 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 410 ISS Output Capacitance C 210 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 7.0 RSS Total Gate Charge Q V = 4.5 V, V = 48 V I = 10 A 2.5 nC G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 48 V I = 10 A 5.0 nC G(TOT) GS DS D Threshold Gate Charge Q 0.6 G(TH) GatetoSource Charge Q 1.0 nC GS V = 10 V, V = 48 V I = 10 A GS DS D GatetoDrain Charge Q 0.5 GD Plateau Voltage V 2.7 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 4.0 d(ON) Rise Time t 12 r V = 10 V, V = 48 V, GS DS ns I = 10 A, R = 2.5 D G TurnOff Delay Time t 12 d(OFF) Fall Time t 1.5 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 SD J V = 0 V, GS V I = 10 A S T = 125C 0.8 J Reverse Recovery Time t 18 RR Charge Time t 9.0 ns a V = 0 V, dI /dt = 100 A/ s, GS S I = 10 A S Discharge Time t 9.0 b Reverse Recovery Charge Q 7.0 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2