NTSJ2080CTG Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low V = 0.50 V at I = 5 A F F www.onsemi.com Features PIN CONNECTIONS Fine Lithography Trenchbased Schottky Technology for Very Low 1 Forward Voltage and Low Leakage 2, 4 Fast Switching with Exceptional Temperature Stability 3 Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability This is a PbFree Package Typical Applications TO220FP CASE 221AH Switching Power Supplies including Notebook / Netbook Adapters, ATX and Flat Panel Display High Frequency and DCDC Converters Freewheeling and ORing diodes MARKING DIAGRAMS Reverse Battery Protection Instrumentation Mechanical Characteristics Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 940 0.125 in AYWW Finish: All External Surfaces Corrosion Resistant and Terminal TS2080CG Leads are Readily Solderable AKA Lead Temperature for Soldering Purposes: 260C Maximum for 10 sec 1 A = Assembly Location Y = Year WW = Work Week AKA = Polarity Designator G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev. 1 NTSJ2080CT/DNTSJ2080CTG MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 80 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 130C) Per device 20 R C Per diode 10 Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz, T = 125C) Per device 40 R C Per diode 20 Nonrepetitive Peak Surge Current I 150 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature T 40 to +150 C J Storage Temperature T 40 to +150 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Value Unit Maximum Thermal Resistance JunctiontoCase R 4.0 C/W JC (insertion mounted to 1 oz FR4 Board) JunctiontoAmbient 105 C/W R JA 1. JunctiontoCase, using large Heatsink attached to device. 2. JunctiontoAmbient, using with no Heatsink. ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 3) v V F (I = 5 A, T = 25C) 0.55 F J (I = 10 A, T = 25C) 0.65 0.83 F J (I = 5 A, T = 125C) 0.50 F J (I = 10 A, T = 125C) 0.58 0.68 F J Maximum Instantaneous Reverse Current (Note 3) I R 600 A (Rated dc Voltage, T = 25C) 6 20 mA J (Rated dc Voltage, T = 125C) J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% ORDERING INFORMATION Device Package Shipping NTSJ2080CTG TO220FP 50 Units / Rail (HalideFree) www.onsemi.com 2