NZL5V6ATT1G ON Semiconductor

NZL5V6ATT1 SC75 Dual Common Anode Zener for ESD Protection This dual monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as NZL5V6ATT1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A UNIDIRECTIONAL (Circuit tied to Pins 1 and 3, or 2 and 3) Symbol Parameter I I Maximum Reverse Peak Pulse Current PP I F V Clamping Voltage @ I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current @ V R RWM V V V C BR RWM V Breakdown Voltage @ I V BR T I V R F I T I Test Current T V Maximum Temperature Coefficient of V BR BR I Forward Current F I PP V Forward Voltage @ I F F Z Maximum Zener Impedance @ I ZT ZT UniDirectional TVS I Reverse Current ZK Z Maximum Zener Impedance @ I ZK ZK MAXIMUM RATINGS (T = 25C unless otherwise noted) A Characteristic Symbol Value Unit Steady State Power 1 Diode (Note 1) P 150 mW D Maximum Junction Temperature T 150 C Jmax Operating Junction and Storage Temperature Range T T 55 to +150 C J stg ESD Discharge IEC6100042, Air Discharge V 15 kV PP IEC6100042, Contact Discharge 8 Lead Solder Temperature (10 seconds duration) T 260 C L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Only 1 diode under power. For all 4 diodes under power, P will be 25%. Mounted on FR4 board with min pad. D ELECTRICAL CHARACTERISTICS Typical Capacitance Breakdown Voltage Leakage Current V @ I Max @ 0 V Bias C PP V @ 1 mA (V) I @ V = 3.0 V (Note 2) V @ I = 10 mA @ 1 MHz BR RM RM F F Device Min Nom Max (A) V (V) I (A) (pF) (V) C PP NZL5V6 5.3 5.6 5.9 1.0 9.97 6.11 40 1.25 2. Surge current waveform per Figure 2 and clamping voltage (V ) per Figure 6. C