NVC3S5A51PLZ Power MOSFET 60V, 250m , 1.8A, P-Channel Automotive Power MOSFET designed to minimize gate charge and low on www.onsemi.com resistance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features V R (on) Max I DSS DS D Max 4V drive 250m 10V High ESD protection 60V 330m 4.5V 1.8A Low On-Resistance 350m 4.0V AEC-Q101 qualified and PPAP capable Pb-Free, Halogen Free and RoHS compliance ELECTRICAL CONNECTION P-Channel Typical Applications Reverse Battery Protection 3 High Side Load Switch Automotive Body Controllers SPECIFICATIONS 1 ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 1 : Gate Parameter SymbolValue Unit 2 : Source 3 : Drain V Drain to Source Voltage 60 V DSS 2 V Gate to Source Voltage 20 V GSS Drain Current (DC) (Note 2) 1.8 A I D Drain Current (DC) (Note 3) A 1.7 MARKING Drain Current (Pulse) I A DP 7.2 PW 10 s, duty cycle 1% 3 Power Dissipation 1.2 W Ta=25 C(Note 2) P D Power Dissipation 1 0.8 W 2 CPH3 Ta=25 C(Note 3) Junction Temperature and Tj, Tstg 55 to +175 C Storage Temperature Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. THERMAL RESISTANCE RATINGS Parameter SymbolValue Unit (Note 2) 125 C/W R Junction to Ambient JA (Note 3) 182 C/W 2 Note 2 : Surface mounted on ceramic substrate(900mm 0.8mm). 2 Note 3 : Surface mounted on FR4 board using a 92mm , 1 oz. Cu pad. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : January 2016 - Rev. 0 NVC3S5A51PLZ/D NVC3S5A51PLZ ELECTRICAL CHARACTERISTICS at Ta 25C (Note 4) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I = 1mA, V =0V V BR DSS D GS 60 I V = 60V, V =0V Zero-Gate Voltage Drain Current DSS 1 A DS GS I Gate to Source Leakage Current V = 16V, V =0V 10 A GSS GS DS V (th) Gate Threshold Voltage V = 10V, I = 1mA 1.2 2.6 V GS DS D Forward Transconductance g V = 10V, I = 1A 2.7 S FS DS D I = 1A, V = 10V 190 250 m D GS Static Drain to Source On-State R (on) I = 0.5A, V = 4.5V 235 330 m DS D GS Resistance I = 0.5A, V = 4V 250 350 D GS m Input Capacitance Ciss 262 pF V = 20V, f=1MHz Output Capacitance Coss 29 pF DS Reverse Transfer Capacitance Crss 19 pF t (on) Turn-ON Delay Time 5.1 ns d Rise Time t 5.4 ns r See Fig.1 t (off) Turn-OFF Delay Time d 34 ns t Fall Time 19 ns f Total Gate Charge Qg 6.0 nC Gate to Source Charge Qgs V = 30V, V = 10V, I = 1.8A 0.83 nC DS GS D Gate to Drain Miller Charge Qgd 1.3 nC V I = 1.8A, V =0V Forward Diode Voltage 0.82 1.2 V SD S GS Note 4 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Switching Time Test Circuit www.onsemi.com 2