NVBLS0D7N04M8 MOSFET Power, Single, N-Channel 40 V, 240 A, 0.75 m Features www.onsemi.com Typical R = 0.59 m at V = 10 V, I = 80 A DS(on) GS D Typical Q = 144 nC at V = 10 V, I = 80 A g(tot) GS D UIS Capability AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS T = 25C unless otherwise noted J MO299A Parameter Symbol Ratings Units CASE 100CU DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS D (9) Drain Current Continuous (V = 10) I 240 A GS D (Note 1) T = 25C C Pulsed Drain Current T = 25C See C Figure 4 Single Pulse Avalanche Energy (Note 2) E 737 mJ G (1) AS Power Dissipation P 357 W D Derate Above 25C 2.38 W/C S (28) Operating and Storage Temperature T , T 55 to +175 C J STG Thermal Resistance, JunctiontoCase R 0.42 C/W JC Maximum Thermal Resistance, R 43 C/W ORDERING INFORMATION JA JunctiontoAmbient (Note 3) Device Package Marking Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NVBLS0D7N04M8TXG MO299A 0D7N04M8 assumed, damage may occur and reliability may be affected. (PbFree) 1. Current is limited by bondwire configuration. 2. Starting T = 25C, L = 0.36 mH, I = 64 A, V = 40 V during inductor J AS DD charging and V = 0 V during time in avalanche. DD 3. R is the sum of the junction to case and case to ambient thermal JA resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by design, while R JC JA is determined by the board design. The maximum rating presented here is 2 based on mounting on a 1 in pad of 2 oz copper. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: June, 2019 Rev. 0 NVBLS0D7N04M8/DNVBLS0D7N04M8 Table 1. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS B DraintoSource Breakdown Voltage I = 250 A, V = 0 V 40 V VDSS D GS DraintoSource Leakage Current V = 40 V, T = 25C 1 I A DSS DS J V = 0 V GS T = 175C (Note 4) 1 mA J I GatetoSource Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V GatetoSource Threshold Voltage V = V , I = 250 A 2.0 3.3 4.0 V GS(th) GS DS D R DraintoSource On Resistance I = 80 A, V = 10 V T = 25C 0.59 0.75 m DS(on) D GS J DYNAMIC CHARACTERISTICS C Input Capacitance V = 25 V, V = 0 V, f = 1 MHz 12000 pF iss DS GS C Output Capacitance 3300 pF oss C Reverse Transfer Capacitance 440 pF rss R Gate Resistance f = 1 MHz 3.3 g Q Total Gate Charge at 10 V V = 0 to 10 V V = 32 V 144 188 nC g(ToT) GS DD I = 80 A D Q Threshold Gate Charge V = 0 to 2 V 22 26 nC g(th) GS Q GatetoSource Gate Charge 66 nC gs Q GatetoDrain Miller Charge 16 nC gd SWITCHING CHARACTERISTICS t TurnOn Time V = 20 V, I = 80 A, 162 ns on DD D V = 10 V, R = 6 GS GEN t TurnOn Delay 42 ns d(on) t Rise Time 73 ns r t TurnOff Delay 83 ns d(off) t Fall Time 50 ns f t TurnOff Time 279 ns off DRAINSOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode Voltage I = 80 A, V = 0 V 1.25 V SD SD GS I = 40 A, V = 0 V 1.2 V SD GS t ReverseRecovery Time 111 129 ns I = 80 A, dI /d = 100 A/ s, rr F SD t V = 32 V DD Q ReverseRecovery Charge 178 214 nC rr 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2