X-On Electronics has gained recognition as a prominent supplier of NVMFD5852NLWFT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVMFD5852NLWFT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVMFD5852NLWFT1G ON Semiconductor

NVMFD5852NLWFT1G electronic component of ON Semiconductor
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Part No.NVMFD5852NLWFT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Pwr MOSFET 40V 44A 6.9mOhm Dual N-CH
Datasheet: NVMFD5852NLWFT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 4.8617
10 : USD 1.7523
25 : USD 1.6669
100 : USD 1.4425
500 : USD 1.2181
1000 : USD 1.046
1500 : USD 1.014
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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NVMFD5852NL Power MOSFET 40 V, 6.9 m , 44 A, Dual NChannel Logic Level, Dual SO8FL Features Small Footprint (5x6 mm) for Compact Designs NVMFD5852NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 37.3 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A J DSS V = 0 V, GS V = 40 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.4 2.4 V GS(TH) GS DS D Negative Threshold Temperature V /T 6.3 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 20 A 5.3 6.9 m DS(on) GS D V = 4.5 V, I = 20 A 8.7 12 GS D Forward Transconductance g V = 5 V, I = 5 A 24 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1800 pF iss Output Capacitance C 240 V = 0 V, f = 1.0 MHz, V = 25 V oss GS DS Reverse Transfer Capacitance C 180 rss Total Gate Charge Q 20 nC G(TOT) Threshold Gate Charge Q 1.5 G(TH) V = 4.5 V, V = 32 V, GS DS I = 20 A D GatetoSource Charge Q 5.5 GS GatetoDrain Charge Q 10.9 GD Total Gate Charge Q V = 10 V, V = 32V, I = 20 A 36 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 12 ns d(on) Rise Time t 52 r V = 4.5 V, V = 32 V, GS DS I = 20 A, R = 2.5 D G TurnOff Delay Time t 21 d(off) Fall Time t 13 f TurnOn Delay Time t 12 ns d(on) Rise Time t 8.0 r V = 10 V, V = 32 V, GS DS I = 20 A, R = 2.5 D G TurnOff Delay Time t 27 d(off) Fall Time t 5.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.84 1.1 V J SD V = 0 V, GS I = 20 A S T = 125C 0.69 J Reverse Recovery Time t 22.3 ns RR Charge Time t 12.8 a V = 0 V, d /d = 100 A/ s, GS IS t I = 20 A S Discharge Time t 9.4 b Reverse Recovery Charge Q 15.2 nC RR 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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