SFP9530 Advanced Power MOSFET FEATURES BV = -100 V DSS n Avalanche Rugged Technology R = 0.3 DS(on) n Rugged Gate Oxide Technology n Lower Input Capacitance I = -10.5 A D n Improved Gate Charge o n 175 C Opereting Temperature TO-220 n Extended Safe Operating Area n Lower Leakage Current : -10 A(Max.) V = -100V DS n Low R : 0.225 (Typ.) DS(ON) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V Drain-to-Source Voltage -100 V DSS o Continuous Drain Current (T =25 C) -10.5 C I A D o Continuous Drain Current (T =100 C) -7.5 C I 1 Drain Current-Pulsed -42 A O DM V Gate-to-Source Voltage 30 V GS E 2 Single Pulsed Avalanche Energy 368 mJ AS O I Avalanche Current 1 -10.5 A AR O E 1 Repetitive Avalanche Energy 6.6 mJ AR O 3 dv/dt Peak Diode Recovery dv/dt -6.5 V/ns O o Total Power Dissipation (T =25 C) 66 W C P D o Linear Derating Factor 0.44 W/ C Operating Junction and T , T - 55 to +175 J STG Storage Temperature Range o C Maximum Lead Temp. for Soldering T 300 L Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R Junction-to-Case -- 2.27 JC o R Case-to-Sink 0.5 -- CS C/W R Junction-to-Ambient -- 62.5 JA Rev. CP-CHANNEL SFP9530 POWER MOSFET o Electrical Characteristics (T =25 C unless otherwise specified) C Symbol Characteristic Min. Typ. Max. Units Test Condition BV V V =0V,I =-250 A DSS Drain-Source Breakdown Voltage -100 -- -- GS D o BV/ T I =-250 A See Fig 7 J Breakdown Voltage Temp. Coeff. V/ C -- -0.1 -- D V V V =-5V,I =-250 A GS(th) Gate Threshold Voltage -2.0 -- -4.0 DS D V =-20V Gate-Source Leakage , Forward -- -- -100 GS I nA GSS V =20V Gate-Source Leakage , Reverse -- -- 100 GS V =-100V -- -- -10 DS I Drain-to-Source Leakage Current DSS A o V =-80V,T =150 C -- -- -100 DS C Static Drain-Source 4 R V =-10V,I =-5.3A -- -- 0.3 O DS(on) GS D On-State Resistance 4 g -- Forward Transconductance 5.5 -- S V =-40V,I =-5.3A fs O DS D C Input Capacitance -- 800 1035 iss V =0V,V =-25V,f =1MHz GS DS C -- Output Capacitance 160 240 oss pF See Fig 5 C Reverse Transfer Capacitance -- 60 90 rss t -- Turn-On Delay Time 13 35 d(on) V =-50V,I =-10.5A, DD D t Rise Time -- 22 55 r R =12 ns G t -- Turn-Off Delay Time 45 100 d(off) See Fig 13 4 5 OO t Fall Time -- 25 60 f Q -- Total Gate Charge 30 38 V =-80V,V =-10V, g DS GS Q Gate-Source Charge -- 5.4 -- nC I =-10.5A gs D 4 5 Q -- Gate-Drain(Miller) Charge 12.2 -- See Fig 6 & Fig 12 OO gd Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition I Continuous Source Current -- -- -10.5 Integral reverse pn-diode S A 1 I Pulsed-Source Current O -- -- -42 in the MOSFET SM o 4 V Diode Forward Voltage V -- -- -4.0 T =25 C,I =-10.5A,V =0V SD O J S GS o t Reverse Recovery Time ns -- 120 -- T =25 C,I =-10.5A rr J F Q Reverse Recovery Charge C 4 -- 0.53 -- di /dt=100A/ s O rr F Notes 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O o 2 L=5.0mH, I =-10.5A, V =-25V, R =27 *, Starting T =25 C O AS DD G J o 3 I < -10.5A, di/dt < 400A/ s, V < BV , Starting T =25 C O SD DD DSS J 4 Pulse Test : Pulse Width = 250 s, Duty Cycle< 2% O 5 Essentially Independent of Operating Temperature O