DA24F4100L

Doc No. TT4-EA-12452 Revision. 3 Product Standards Fast Recovery Diode DA24F4100L DA24F4100L Silicon epitaxial planar type Unit: mm 2.4 0.15 For high speed switching circuits 2 Features Small reverse current IR Short reverse recovery time trr Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol: 4Q 1.75 0.85 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Cathode 2. Anode Panasonic TMiniP2-F2-B JEITA SC-110A Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Repetitive peak reverse voltage VRRM 400 V Internal Connection Non-repetitive peak reverse surge voltage VRSM 400 V 2 Forward current IF 1.0 A *1 IFSM 20 A Non-repetitive peak forward surge current Junction temperature Tj -40 to +150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -40 to +150 C Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current) 1 Page 1 of 4 Established : 2010-03-18 Revised : 2013-05-24 3.8 4.7Doc No. TT4-EA-12452 Revision. 3 Product Standards Fast Recovery Diode DA24F4100L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 1A 1.0 1.2 V Reverse current IRRM VRRM = 400 V 10 A Terminal capacitance Ct VR = 0 V, f = 1 MHz 50 pF IF = 0.5 A , IR = 1.0 A *1 trr 15 45 ns Reverse recovery time Irr = 0.25 IR Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1: trr test circuit 50 50 t rr D.U.T. I F 0.25 I R 5.5 I R Page 2of 4 Established : 2010-03-18 Revised : 2013-05-24