RF2001NS3DTL ROHM

RF2001NS3DTL electronic component of ROHM
RF2001NS3DTL ROHM
RF2001NS3DTL Rectifiers
RF2001NS3DTL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RF2001NS3DTL Rectifiers across the USA, India, Europe, Australia, and various other global locations. RF2001NS3DTL Rectifiers are a product manufactured by ROHM. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

Part No. RF2001NS3DTL
Manufacturer: ROHM
Category: Rectifiers
Description: ROHM Semiconductor Rectifiers DIODE FAST REC 350V 20.0A D2PAK
Datasheet: RF2001NS3DTL Datasheet (PDF)
Price (USD)
202: USD 1.2922 ea
Line Total: USD 261.02 
Availability : 337
  
Ship by Fri. 08 Aug to Thu. 14 Aug
QtyUnit Price
202$ 1.2922

Availability 249
Ship by Fri. 15 Aug to Wed. 20 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.1604
10$ 1.9724
30$ 1.2604
100$ 1.1801
500$ 1.0942
1000$ 1.0774


Availability 126
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.0125
10$ 2.004
100$ 1.474
500$ 1.188
1000$ 1.0945
2000$ 1.0516


Availability 940
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 165
Multiples : 1
QtyUnit Price
165$ 1.5778
173$ 1.5072
250$ 1.4468
500$ 1.3409


Availability 530
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 530
Multiples : 1
QtyUnit Price
530$ 0.4914
639$ 0.4069


Availability 337
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 202
Multiples : 1
QtyUnit Price
202$ 1.2922

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Product
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RF2001NS3DTL from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RF2001NS3DTL and other electronic components in the Rectifiers category and beyond.

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Data Sheet Super Fast Recovery Diode RF2001NS3D Series Dimensions (Unit : mm) Land size figure (Unit : mm) Standard Fast Recovery RF2001 Applications NS3D General rectification Features 1)Ultra low switching loss 2)High current overload capacity Structure 3)Cathode common dual type ROHM : LPDS JEITA : TO263S Construction Manufacture Year, Week and Day Silicon epitaxial planer Taping dimensions (Unit : mm) Absolute maximum ratings (Tc=25 C) Parameter Conditions Symbol Limits Unit Repetitive peak reverse voltage V Duty0.5 350 V RM V Reverse voltage Direct voltage 300 V R 60Hz half sin wave resistive load , 20 A Average rectified forward current Io Tc=90C 1/2 Io per diode 60Hz half sin wave, Non-repetitive 100 A I Forward current surge peak FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature Tstg C 55 to 150 Electrical characteristics (Tj=25 C, per diode) Parameter Conditions Symbol Min. Typ. Max. Unit V I =10A Forward voltage 1.2 1.3 V F F Reverse current I V =300V R 0.03 10 A R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 17 25 ns F R R Thermal resistance junction to case Rth(j-c) 2 C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/4Data Sheet RF2001NS3D 100 100000 Tj=150 C 10000 Tj=125 C 10 Tj=125 C 1000 Tj=150 C Tj=25 C 100 Tj=75 C Tj=25 C 1 Tj=75 C 10 per diode per diode 0.1 1 0 500 1000 1500 2000 0 50 100 150 200 250 300 FORWARD VOLTAGEV (mV) REVERSE VOLTAGEV (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1300 I =10A F f=1MHz Tj=25 C per diode 1250 per diode 1200 100 1150 AVE:1163mV 1100 1050 10 1000 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) V DISPERSION MAP R F V -Ct CHARACTERISTICS R 100 240 f=1MHz V =300V R V =0V R Tj=25 C Tj=25 C per diode per diode 220 AVE:46.7nA 10 200 AVE:207.8pF 1 180 Ct DISPERSION MAP I DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 2/4 CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) FORWARD CURRENT:I (A) R F TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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