Product Information

RF2001NS3DTL

Hot RF2001NS3DTL electronic component of ROHM

Datasheet
ROHM Semiconductor Rectifiers DIODE FAST REC 350V 20.0A D2PAK
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

53: USD 0.7433 ea
Line Total: USD 39.39

724 - Global Stock
Ships to you between
Thu. 16 May to Wed. 22 May
MOQ: 53  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
321 - WHS 1


Ships to you between
Thu. 23 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 1.5165
10 : USD 1.3774
30 : USD 1.3029
100 : USD 1.2163
500 : USD 1.1237
1000 : USD 1.1056

126 - WHS 2


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 2.2195
10 : USD 1.886
100 : USD 1.541
500 : USD 1.3225
1000 : USD 1.1443
2000 : USD 1.1443
5000 : USD 1.1362
10000 : USD 1.0994

940 - WHS 3


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 70
Multiples : 1
70 : USD 1.4063
100 : USD 1.3783

724 - WHS 4


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 53
Multiples : 1
53 : USD 0.7433
100 : USD 0.7246

337 - WHS 5


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 70
Multiples : 1
70 : USD 1.4298

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Product
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RF2001NS3D Series Dimensions (Unit : mm) Land size figure (Unit : mm) Standard Fast Recovery RF2001 Applications NS3D General rectification Features 1)Ultra low switching loss 2)High current overload capacity Structure 3)Cathode common dual type ROHM : LPDS JEITA : TO263S Construction Manufacture Year, Week and Day Silicon epitaxial planer Taping dimensions (Unit : mm) Absolute maximum ratings (Tc=25 C) Parameter Conditions Symbol Limits Unit Repetitive peak reverse voltage V Duty0.5 350 V RM V Reverse voltage Direct voltage 300 V R 60Hz half sin wave resistive load , 20 A Average rectified forward current Io Tc=90C 1/2 Io per diode 60Hz half sin wave, Non-repetitive 100 A I Forward current surge peak FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature Tstg C 55 to 150 Electrical characteristics (Tj=25 C, per diode) Parameter Conditions Symbol Min. Typ. Max. Unit V I =10A Forward voltage 1.2 1.3 V F F Reverse current I V =300V R 0.03 10 A R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 17 25 ns F R R Thermal resistance junction to case Rth(j-c) 2 C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/4Data Sheet RF2001NS3D 100 100000 Tj=150 C 10000 Tj=125 C 10 Tj=125 C 1000 Tj=150 C Tj=25 C 100 Tj=75 C Tj=25 C 1 Tj=75 C 10 per diode per diode 0.1 1 0 500 1000 1500 2000 0 50 100 150 200 250 300 FORWARD VOLTAGEV (mV) REVERSE VOLTAGEV (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1300 I =10A F f=1MHz Tj=25 C per diode 1250 per diode 1200 100 1150 AVE:1163mV 1100 1050 10 1000 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) V DISPERSION MAP R F V -Ct CHARACTERISTICS R 100 240 f=1MHz V =300V R V =0V R Tj=25 C Tj=25 C per diode per diode 220 AVE:46.7nA 10 200 AVE:207.8pF 1 180 Ct DISPERSION MAP I DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 2/4 CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) FORWARD CURRENT:I (A) R F TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) R

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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