PPJA3439 60V P-Channel Enhancement Mode MOSFET SOT-23 Unit : inch(mm) -60 V -300mA Voltage Current Features RDS(ON) , VGS -10V, ID -500mA<4 RDS(ON) , VGS -4.5V, ID -200mA<6 RDS(ON) , VGS -2.5V, ID -50mA<13 Advanced Trench Process Technology Specially Designed for Relay driver, Speed line drive, etc. Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A39 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V -60 V DS Gate-Source Voltage V +20 V GS Continuous Drain Current I -300 mA D Pulsed Drain Current I -1000 mA DM o T =25 C 500 mW A Power Dissipation P D o o Derate above 25 C 4 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 250 JA - Junction to Ambient C/W July 21,2015-REV.00 Page 1 PPJA3439 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS (Note 1) Static Drain-Source Breakdown Voltage BV V =0V,I =-250uA -60 - - V DSS GS D Gate Threshold Voltage V V =V , I =-250uA -1.0 -1.5 -2.5 V GS(th) DS GS D V =-10V,I =-500mA - 2.4 4 GS D Drain-Source On-State Resistance R V =-4.5V,I =-200mA - 2.65 6 DS(on) GS D V =-2.5V,I =-50mA - 4.5 13 GS D Zero Gate Voltage Drain Current I V =-48V,V =0V - - -1 uA DSS DS GS Gate-Source Leakage Current I V =+20V,V =0V - - +100 nA GSS GS DS (Note 4) Dynamic Total Gate Charge Q - 1.1 - g V =-25V, I =-100mA, DS D Gate-Source Charge Q - 0.3 - nC gs V =-4.5V GS Gate-Drain Charge Q - 0.2 - gd Input Capacitance Ciss - 51 - V =-25V, V =0V, DS GS Output Capacitance Coss - 15 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 2.2 - Turn-On Delay Time td - 4.8 - (on) V =-25V, I =-100mA, DD D Turn-On Rise Time tr - 19 - V =-10V, ns GS Turn-Off Delay Time td - 52 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 32 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - -300 mA S Diode Forward Current Diode Forward Voltage V I =-500mA, V =0V - -0.95 -1.3 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper 4. Guaranteed by design, not subject to production testing July 21,2015-REV.00 Page 2