PPJC7476 100V N-Channel Enhancement Mode MOSFET ESD Protected SOT-323 Unit: inch(mm) Voltage 100 V Current 300mA Features RDS(ON) , VGS 10V, ID 300mA<6 RDS(ON) , VGS 4.5V, ID 200mA<9 Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2011/65/EU directive. ESD Protected 2KV HBM Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-323 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00018 ounces, 0.005 grams Marking: C76 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 100 V DS Gate-Source Voltage V +20 V GS Continuous Drain Current I 300 mA D (Note 4) Pulsed Drain Current I 800 mA DM o T =25 C 350 mW a Power Dissipation P D o o Derate above 25 C 2.8 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 357 JA - Junction to Ambient C/W June 10,2015-REV.00 Page 1 PPJC7476 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =250uA 100 - - V DSS GS D Gate Threshold Voltage V V =V , I =250uA 1.5 1.77 2.5 V GS(th) DS GS D V =10V, I =300mA - 4 6 GS D Drain-Source On-State Resistance R DS(on) V =4.5V, I =200mA - 4.2 9 GS D Zero Gate Voltage Drain Current I V =80V, V =0V - - 1 uA DSS DS GS Gate-Source Leakage Current I V =+20V, V =0V - - +10 uA GSS GS DS (Note 5) Dynamic Total Gate Charge Q - 1.8 - g V =30V, I =200mA, DS D Gate-Source Charge Q - 0.4 - nC gs (Note 1,2) V =10V GS Gate-Drain Charge Q - 0.3 - gd Input Capacitance Ciss - 45 - V =25V, V =0V, DS GS Output Capacitance Coss - 14 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 7.8 - Turn-On Delay Time td - 3.4 - (on) V =30V, I =200mA, DD D Turn-On Rise Time tr - 19 - V =10V, ns GS Turn-Off Delay Time td - 8.2 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 20 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - 400 mA S Diode Forward Current Diode Forward Voltage V I =400mA, V =0V - 0.9 1.3 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited. 5. Guaranteed by design, not subject to production testing. June 10,2015-REV.00 Page 2