TGA2622 9.010.0 GHz 40 Watt GaN Power Amplifier Product Overview Qorvos TGA2622 is an x-band, high power MMIC amplifier fabricated on Qorvos production 0.25um GaN on SiC process (QGaN25). The TGA2622 operates from 9 10 GHz and provides a superior combination of power, gain and efficiency. Achieving 40W of saturated output power with 28 dB of large signal gain and 45% power-added efficiency, the TGA2622 provides the level of performance demanded by todays system architectures. Depending on the system requirements, the TGA2622 can support cost saving initiatives on existing systems while supporting next generation systems with increased Key Features performance. Frequency Range: 9 10 GHz Lead-free and RoHS compliant. P : 46dBm (P = 18 dBm) SAT IN P1dB: > 40dBm PAE: > 46% (PIN = 18 dBm) Large Signal Gain: 28 dB Small Signal Gain: 32 dB Bias: V = 28 V, I = 290 mA D DQ Pulsed V : PW = 100 us and DC = 10% D Die Dimensions: 5.0 x 4.86 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Weather and Marine Radar Ordering Information Part No. Description 9.010.0 GHz 40 Watt GaN Amplifier (10 TGA2622 Pcs.) TGA2622EVB Evaluation Board for TGA2622 Data Sheet Rev. A, September 2020 Subject to change without notice 1 of 14 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential TGA2622 9.05 10.0 GHz 40 Watt GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 40 V Drain Voltage (VD) 28 V Gate Voltage Range (V ) -10 to -2 V Drain Current (I ) 290 mA (Total) G DQ Drain Current (ID1-2) 2.3 A Operating Temperature 40 to +85 C Drain Current (ID3) 4.3 A Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Gate Current (I ) -3.5 to 17.5 mA G1-2 recommended operating conditions. Gate Current (IG3) -11 to 28 mA Power Dissipation (P ), 85C, CW 96 W DISS Input Power (P ), CW, 50, IN 24 dBm V = 28V, 85C D Input Power (P ), CW, VSWR 6:1 IN 20 dBm V = 28V, 85C D Mounting Temperature (30 seconds) 320 C Storage Temperature -55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency 9.0 10.0 GHz 9.0 GHz 45 46 dBm Output Power (P = 18 dBm) 9.5 GHz 45 46 dBm IN 10.0 GHz 45 46 dBm 9.0 GHz 40 46 % Power Added Efficiency (P = 18 dBm) 9.5 GHz 40 46 % IN 10.0 GHz 35 46 % Power Gain (P = 18 dBm) 28 dB IN Output Power (1 dB Compression Point) 40 dBm Small Signal Gain 32 dB Input Return Loss 12 dB Output Return Loss 8 dB Sm. Sig. Gain Temp. Coefficient (85 C to40 C) 0.076 dB/C Recommended Operating Voltage 20 28 32 V Test conditions, unless otherwise noted: T = +25 C, V = 28 V, I = 290 mA, Pulsed V : PW = 100 us, Duty Cycle = 10% D DQ D Data Sheet Rev. A, September 2020 Subject to change without notice 2 of 14 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential