Product Information

BAW156HMT116

BAW156HMT116 electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching BAW156HM is high reliability and small mold type diode for general switching. Silicon Diode, Vrrm=85V, Vr=80V
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2504 ea
Line Total: USD 0.25

8 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
8 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.2504
10 : USD 0.1732
100 : USD 0.0712
1000 : USD 0.0664
3000 : USD 0.0546
9000 : USD 0.0439
24000 : USD 0.0427
45000 : USD 0.0391
99000 : USD 0.0344

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Operating Temperature Range
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

BAW156HM Switching Diode (Low leakage) Data sheet Outline V 100 V RM I 500 mA FM I 215 mA F I 4000 mA FSM Features Inner Circuit High reliability Small mold type Low I R Application Packaging Specifications Packing Embossed Tape General switching Reel Size(mm) 180 Taping Width(mm) 8 Structure Basic Ordering Unit(pcs) 3000 Epitaxial planar Taping Code T116 Marking D8Z (T = 25C) Absolute Maximum Ratings a Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V - 100 V RM V Reverse voltage - 80 V R P Power dissipation Ta25 250 mW D I Repetitive peak reverse forward current Per diode 500 mA FM Peak forward surge current I t=1s 4000 mA FSM Per diode 215 mA I Forward current F Per device 125 mA T Junction temperature - 150 j T Storage temperature - -65 150 stg Cautionstatic electricity www.rohm.com 1/5 2017 ROHM Co., Ltd. All rights reserved. 2018/11/29 Rev.006 Not Recommended for New DesignsBAW156HM Data sheet (T = 25C) Characteristics Value per element a Parameter Symbol Conditions Min. Typ. Max. Unit I =1mA - - 0.90 V F I =10mA - - 1.00 V F V Forward voltage F I =50mA - - 1.10 V F I =150mA - - 1.25 V F V =75V T=25 - - 5.0 nA R j I Reverse current V =75V T=150 R - - 80 nA R j - - - - A C V =0V f=1.0MHz Capacitance between terminals t - - 4.0 pF R t I =I =10mA R =100 I =1mA Reverse recovery time - - 3.0 s rr F R L rr www.rohm.com 2/5 2017 ROHM Co., Ltd. All rights reserved. 2018/11/29 Rev.006 Not Recommended for New Designs

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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