BSM300D12P3E005 ROHM

SiC Power Module Datasheet BSM300D12P3E005 Application Circuit diagram Motor drive 1 7 Inverter, Converter Photovoltaics, wind power generation. 9 8 Induction heating equipment. 3,4 Features 6 5 1) Low surge, low switching loss. 2 10 2) High-speed switching possible. NTC 11 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) www.rohm.com 12.Mar.2019 - Rev.001 2019 ROHM Co., Ltd. All rights reserved. 1/10 BSM300D12P3E005 Datasheet Absolute maximum ratings (T = 25C) j Parameter Symbol Conditions Ratings Unit V G-S short 1200 Drain - Source Voltage DSS V D-S short 22 Gate - Source Voltage (+) GSS V V Gate - Source Voltage (-) D-S short -4 GSS V G - S Voltage (t <300nsec) D-S short -4 to 26 GSSsurge surge I DC(Tc=60 ) VGS=18V 294 D Drain Current I DC(Tc=55 ) VGS=18V D 300 Note 1) I Pulse (Tc = 60 1ms VGS=18V 600 DRM Note 2) I DC(Tc=60 ) VGS=18V 294 S A I DC(Tc=55 ) VGS=18V 300 S I Source Current DC(Tc=60 ) VGS=0V 218 S Note 1) I Pulse (Tc = 60 1ms VGS=18V 600 SRM Note 2) I Pulse (Tc = 60 10us VGS=0V SRM Note 2) 600 Total Power Dissipation Ptot Tc = 25C 1260 W Note 3) Tjmax 175 Max Junction Temperature Tjop -40 to 150 C Junction Temperature Storage Temperature Tstg -40 to 125 Visol Terminals to baseplate f = 60Hz AC 1 min. Isolation Voltage 2500 Vrms Main Terminals : M6 screw 4.5 - N m Mounting Torque Mounting to heat sink M5 screw 3.5 Note 1) Case temperature (Tc) is defined on the surface of base plate just under the chips. Note 2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. Note 3) Tj is less than 175C. Example of acceptable V waveform Wavelength for Switching Test GS E on=Id Vds Eoff= IdVd s +26V t rr t s u r g e V surge VD S +22V 90% 90% 10% 10% 10% 2% 2 % 2% 2% ID 90 % 10% VG S tr t d(off) t f td (on) -4V www.rohm.com 12.Mar.2019 - Rev.001 2019 ROHM Co., Ltd. All rights reserved. 2/10