SiC Power Module BSM180D12P2E002 Datasheet Application Circuit diagram Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Features 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.02 - Rev.C 1/10Datasheet BSM180D12P2E002 Absolute maximum ratings (T = 25C) j Parameter Conditions Limit Symbol Unit Drain-source voltage V G-S short 1200 DSS 22 Gate-source voltage() V D-S short V GSS Gate-source voltage() 6 G - S Voltage (t <300nsec) V D-S short 10 to 26 surge GSS surge I DC (T =60C) 204 D c 1 2 I 360 Drain current * Pulse (T =60C) 1ms * DRM c 2 I 540 DRM Pulse (T =60C) 10us * c A I DC (T =60C ) V =18V 204 S c GS 1 2 I Pulse (Tc=60C) 1ms V =18V* 360 Source current * SRM GS 2 I 540 Pulse (Tc=60C) 10us V =18V* SRM GS 3 T =25C 1360 Ptot W Total power disspation * c Max Junction Temperature T 175 jmax Operating junction temperature T C 40 to150 jop Storage temperature T 40 to125 stg Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. 4.5 Main Terminals : M6 screw Mounting torque N m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (T ) is defined on the surface of base plate just under the chips. c (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T j max. (*3) T is less than 175C j Example of acceptable V waveform GS 26V t surge 22V 0V t surge 6V 10V www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.02 - Rev.C 2/10