BSM180D12P2C101 ROHM

10 9 8 7 6 5 SiC Power Module BSM180D12P2C101 Datasheet Application Circuit diagram Motor drive 1 Inverter, Converter 10 Photovoltaics, wind power generation. 9 8(N.C) 3,4 Induction heating equipment. 5 6 7(N.C) Features 2 *Do not connnect to NC pin. 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOS from ROHM. Dimensions & Pin layout (Unit : mm) 4 1 2 3 www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 21.Aug.2019 - Rev.002 1/9Datasheet BSM180D12P2C101 Absolute maximum ratings (Tj = 25C) Parameter Conditions Limit Symbol Unit Drain-source voltage V G-S short 1200 V DSS 22 Gate-source voltage() D-S short V V GSS Gate-source voltage() D-S short 6 V G - S Voltage (tsurge<300ns) V D-S short 10 to 26 C GSSsurge I DC(Tc=60C) 204 A D 1 Drain current * 2 I 360 A DRM Pulse (Tc=60C) 1ms * I Tc=60C V =18V 204 A S GS 1 2 360 Source current * Pulse (Tc=60C) 1ms V =18V * A GS I SRM 2 Pulse (Tc=60C) 10 s V =0V * 360 A GS 3 Ptot Tc=25C 1360 W Total power disspation * 175 Max Junction Temperature Tjmax C Junction Temperature Tjop 40 to 150 C Storage temperature Tstg 40 to 125 C Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. Main Terminals : M6 screw 4.5 N m Mounting torque Mounting to heat shink : M5 screw 3.5 N m (*1) Case temperature (T ) is defined on the surface of base plate just under the chips. c (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T jmax. (*3) T is less than 175C j Example of acceptable V waveform GS 26V t surge 22V 0V t surge 6V 10V www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 21.Aug.2019 - Rev.002 2/9